| Examination of the interplay between polarization switching and charge trapping in ferroelectric FET S Deng, Z Jiang, S Dutta, H Ye, W Chakraborty, S Kurinec, S Datta, K Ni 2020 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2020 | 48 | 2020 |
| A new series of low-loss multicomponent oxide microwave dielectrics with a rock salt structure: Li5MgABO8 (A= Ti, Sn; B= Nb, Ta) X Zhang, Z Jiang, B Tang, Z Fang, Z Xiong, H Li, C Yuan, S Zhang Ceramics International 46 (8), 10332-10340, 2020 | 24 | 2020 |
| Asymmetric double-gate ferroelectric FET to decouple the tradeoff between thickness scaling and memory window Z Jiang, Y Xiao, S Chatterjee, H Mulaosmanovic, S Duenkel, S Soss, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 16 | 2022 |
| On the write schemes and efficiency of FeFET 1T NOR array for embedded nonvolatile memory and beyond Y Xiao, Y Xu, Z Jiang, S Deng, Z Zhao, A Mallick, L Sun, R Joshi, X Li, ... 2022 International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2022 | 14 | 2022 |
| On the feasibility of 1t ferroelectric FET memory array Z Jiang, Z Zhao, S Deng, Y Xiao, Y Xu, H Mulaosmanovic, S Duenkel, ... IEEE Transactions on Electron Devices 69 (12), 6722-6730, 2022 | 10 | 2022 |
| Hybrid stochastic synapses enabled by scaled ferroelectric field-effect transistors ANM Islam, A Saha, Z Jiang, K Ni, A Sengupta Applied Physics Letters 122 (12), 2023 | 6 | 2023 |
| A homogeneous processing fabric for matrix-vector multiplication and associative search using ferroelectric time-domain compute-in-memory X Yin, Q Huang, F Müller, S Deng, A Vardar, S De, Z Jiang, M Imani, ... arXiv preprint arXiv:2209.11971, 2022 | 6 | 2022 |
| Ferroelectric compute-in-memory annealer for combinatorial optimization problems X Yin, Y Qian, A Vardar, M Günther, F Müller, N Laleni, Z Zhao, Z Jiang, ... Nature Communications 15 (1), 2419, 2024 | 4 | 2024 |
| One-shot learning goes 3D Z Zhao, S Deng, Z Jiang, K Ni Nature Electronics 4 (12), 866-867, 2021 | 4 | 2021 |
| Powering disturb-free reconfigurable computing and tunable analog electronics with dual-port ferroelectric FET Z Zhao, S Deng, S Chatterjee, Z Jiang, MS Islam, Y Xiao, Y Xu, ... ACS Applied Materials & Interfaces 15 (47), 54602-54610, 2023 | 2 | 2023 |
| Charge trapping challenges of CMOS embedded complementary FeFETs S Beyer, D Kleimaier, S Dünkel, H Mulaosmanovic, S Soss, J Müller, ... 2024 IEEE International Memory Workshop (IMW), 1-4, 2024 | 1 | 2024 |
| Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory Z Jiang, Z Guo, X Luo, M Sayed, Z Faris, H Mulaosmanovic, S Duenkel, ... IEEE Electron Device Letters, 2023 | 1 | 2023 |
| Device Feasibility Analysis of Multi-level FeFETs for Neuromorphic Computing A Saha, B Manna, S Lu, Z Jiang, K Ni, A Sengupta 2024 IEEE 6th International Conference on AI Circuits and Systems (AICAS …, 2024 | | 2024 |
| Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning B Manna, A Saha, Z Jiang, K Ni, A Sengupta IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate Z Zhao, S Woo, KA Aabrar, SG Kirtania, Z Jiang, S Deng, Y Xiao, ... arXiv preprint arXiv:2403.04981, 2024 | | 2024 |
| Hybrid Stochastic Synapses Enabled by Scaled Ferroelectric Field-effect Transistors ANM Nafiul Islam, A Saha, Z Jiang, K Ni, A Sengupta arXiv e-prints, arXiv: 2209.13685, 2022 | | 2022 |
Kai NiUniversity of Notre Dame在 nd.edu 的电子邮件经过验证
