| A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range ÖF Yüksel, M Kuş, N Şimşir, H Şafak, M Şahin, E Yenel Journal of Applied Physics 110 (2), 2011 | 61 | 2011 |
| Temperature dependence of current–voltage characteristics of Al/p-Si (1 0 0) Schottky barrier diodes ÖF Yüksel Physica B: Condensed Matter 404 (14-15), 1993-1997, 2009 | 59 | 2009 |
| Electrical properties of Au/perylene-monoimide/p-Si Schottky diode ÖF Yüksel, N Tuğluoğlu, B Gülveren, H Şafak, M Kuş Journal of Alloys and Compounds 577, 30-36, 2013 | 57 | 2013 |
| The modification of Schottky barrier height of Au/p-Si Schottky devices by perylene-diimide ÖF Yüksel, N Tuğluoğlu, H Şafak, M Kuş Journal of Applied Physics 113 (4), 2013 | 51 | 2013 |
| Dispersion analysis of SnS and SnSe H ŞAFAK, M Merdan, ÖF Yüksel Turkish Journal of Physics 26 (5), 341-348, 2002 | 50 | 2002 |
| Analysis of I–V measurements on Ag/p-SnS and Ag/p-SnSe Schottky barriers H Şafak, M Şahin, ÖF Yüksel Solid-State Electronics 46 (1), 49-52, 2002 | 42 | 2002 |
| Optical dispersion and dielectric properties of rubrene organic semiconductor thin film B Barış, HG Özdemir, N Tuğluoğlu, S Karadeniz, ÖF Yüksel, Z Kişnişci Journal of Materials Science: Materials in Electronics, 1-8, 2014 | 36 | 2014 |
| Analysis of temperature dependent electrical properties of Au/perylene-diimide/n-Si Schottky diodes ÖF Yüksel, N Tuğluoğlu, H Şafak, Z Nalçacıgil, M Kuş, S Karadeniz Thin Solid Films 534, 614-620, 2013 | 36 | 2013 |
| High frequency characteristics of tin oxide thin films on Si ÖF Yüksel, SB Ocak, AB Selcuk Vacuum 82 (11), 1183-1186, 2008 | 36 | 2008 |
| Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique N Tuğluoğlu, B Barış, H Gürel, S Karadeniz, ÖF Yüksel Journal of alloys and compounds 582, 696-702, 2014 | 34 | 2014 |
| Analysis of electrical properties of Al/p-Si Schottky contacts with and without rubrene layer S Karadeniz, B Barış, ÖF Yüksel, N Tuğluoğlu Synthetic metals 168, 16-22, 2013 | 34 | 2013 |
| Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity O Pakma, Ş Çavdar, H Koralay, N Tuğluoğlu, ÖF Yüksel Physica B: Condensed Matter 527, 1-6, 2017 | 31 | 2017 |
| Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique N Tuğluoğlu, ÖF Yüksel, S Karadeniz, H Şafak Materials science in semiconductor processing 16 (3), 786-791, 2013 | 29 | 2013 |
| Investigation of current–voltage and capacitance–voltage characteristics of Ag/perylene-monoimide/n-GaAs Schottky diode N Şimşir, H Şafak, ÖF Yüksel, M Kuş Current applied physics 12 (6), 1510-1514, 2012 | 29 | 2012 |
| Optical characterization of Cu 2 ZnSnSe 4-x S x nanocrystals thin film M Yıldırım, F Özel, N Tuğluoğlu, ÖF Yüksel, M Kuş Journal of Alloys and Compounds 666, 144-152, 2016 | 28 | 2016 |
| Silver Doped Zinc Stannate (Ag-ZnSnO3) for the Photocatalytic Degradation of Caffeine under UV Irradiation CB Anucha, II Altin, E Bacaksiz, VN Stathopoulos, I Polat, A Yasar, ... Water 13 (9), 1290, 2021 | 27 | 2021 |
| Investigation of diode parameters using I–V and C–V characteristics of In/SiO2/p-Si (MIS) Schottky diodes ÖF Yüksel, AB Selcuk, SB Ocak Physica B: Condensed Matter 403 (17), 2690-2697, 2008 | 26 | 2008 |
| Fabrication of a New Hybrid Coronene/n-Si Structure by Using Spin Coating Technique and its Photoresponse and Admittance Spectroscopy Studies Ü Akın, ÖF Yüksel, E Taşcı, N Tuğluoğlu Silicon 12, 1399–1405, 2020 | 22 | 2020 |
| Investigation of optical and dispersion parameters of electrospinning grown activated carbon nanofiber (ACNF) layer K Dincer, B Waisi, G Önal, N Tuğluoğlu, J McCutcheon, ÖF Yüksel Synthetic Metals 237, 16-22, 2018 | 21 | 2018 |
| Effects of gamma irradiation on dielectric characteristics of SnO2 thin films AB Selçuk, SB Ocak, ÖF Yüksel Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2008 | 20 | 2008 |
