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Observation of Power MOSFET Composed of Silicon Carbide with a Planar Type in the Voltage Applying State Using a Scanning Probe Microscope
A Doi, N Satoh, H Yamamoto
2021 IEEE 30th International Symposium on Industrial Electronics (ISIE), 1-6, 2021
强制性开放获取政策: Fundação para a Ciência e a Tecnologia, Portugal
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