| A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ... Applied Physics Letters 109 (24), 2016 | 51 | 2016 |
| Digital alloy InAlAs avalanche photodiodes J Zheng, Y Yuan, Y Tan, Y Peng, AK Rockwell, SR Bank, AW Ghosh, ... Journal of Lightwave Technology 36 (17), 3580-3585, 2018 | 42 | 2018 |
| Green and red light-emitting diodes based on multilayer InGaN/GaN dots grown by growth interruption method W Lv, L Wang, J Wang, Y Xing, J Zheng, D Yang, Z Hao, Y Luo Japanese Journal of Applied Physics 52 (8S), 08JG13, 2013 | 38 | 2013 |
| Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys Y Yuan, J Zheng, Y Tan, Y Peng, AK Rockwell, SR Bank, A Ghosh, ... Photonics Research 6 (8), 794-799, 2018 | 35 | 2018 |
| AlInAsSb impact ionization coefficients Y Yuan, J Zheng, AK Rockwell, SD March, SR Bank, JC Campbell IEEE Photonics Technology Letters 31 (4), 315-318, 2019 | 31 | 2019 |
| Strain effect on band structure of InAlAs digital alloy J Zheng, Y Tan, Y Yuan, AW Ghosh, JC Campbell Journal of Applied Physics 125 (8), 2019 | 22 | 2019 |
| Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition J Zheng, AH Jones, Y Tan, AK Rockwell, S March, SZ Ahmed, CA Dukes, ... Applied Physics Letters 115 (12), 2019 | 21 | 2019 |
| III-V on silicon avalanche photodiodes by heteroepitaxy Y Yuan, D Jung, K Sun, J Zheng, AH Jones, JE Bowers, JC Campbell Optics letters 44 (14), 3538-3541, 2019 | 18 | 2019 |
| Comparison of Different Period Digital Alloy AlInAsSb Avalanche Photodiodes Y Yuan, AK Rockwell, Y Peng, J Zheng, SD March, AH Jones, M Ren, ... Journal of Lightwave Technology 37 (14), 3647-3654, 2019 | 17 | 2019 |
| A GaN p–i–p–i–n Ultraviolet Avalanche Photodiode ZHENG Ji-Yuan(郑纪元)1, WANG Lai(汪莱)1**, HAO Zhi-Biao(郝智彪)1, LUO Yi(罗 ... CHIN. PHYS. LETT. 29 (9), 097804, 2012 | 15 | 2012 |
| Near ultraviolet enhanced 4H-SiC Schottky diode Y Shen, AH Jones, Y Yuan, J Zheng, Y Peng, B VanMil, K Olver, ... Applied Physics Letters 115 (26), 2019 | 14 | 2019 |
| Triple-mesa avalanche photodiodes with very low surface dark current Y Yuan, Y Li, J Abell, JY Zheng, K Sun, C Pinzone, JC Campbell Optics Express 27 (16), 22923-22929, 2019 | 13 | 2019 |
| Theoretical study on interfacial impact ionization in AlN/GaN periodically stacked structure J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ... Applied Physics Express 10 (7), 071002, 2017 | 12 | 2017 |
| Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure J Zheng, L Wang, D Yang, J Yu, X Meng, Z Hao, C Sun, B Xiong, Y Luo, ... Scientific reports 6 (1), 35978, 2016 | 12 | 2016 |
| The influence of structure parameter on GaN/AlN periodically stacked structure avalanche photodiode J Zheng, L Wang, X Wu, Z Hao, C Sun, B Xiong, Y Luo, Y Han, J Wang, ... IEEE Photonics Technology Letters 29 (24), 2187-2190, 2017 | 11 | 2017 |
| A future perspective on in-sensor computing W Pan, J Zheng, L Wang, Y Luo Engineering 14 (7), 7797, 2022 | 10 | 2022 |
| Full band Monte Carlo simulation of AlInAsSb digital alloys J Zheng, SZ Ahmed, Y Yuan, A Jones, Y Tan, AK Rockwell, SD March, ... InfoMat 2 (6), 1236-1240, 2020 | 10 | 2020 |
| Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure J Yu, L Wang, D Yang, J Zheng, Y Xing, Z Hao, Y Luo, C Sun, Y Han, ... Scientific Reports 6 (1), 35597, 2016 | 10 | 2016 |
| Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch J Zheng, X Xue, C Ji, Y Yuan, K Sun, D Rosenmann, L Wang, J Wu, ... Nature Communications 13 (1), 1517, 2022 | 9 | 2022 |
| Photoelectrochemistry of self‐limiting electrodeposition of Ni film onto GaAs Y Xu, R Ahmed, J Zheng, ER Hoglund, Q Lin, E Berretti, A Lavacchi, ... Small 16 (39), 2003112, 2020 | 7 | 2020 |
Joe CampbellProfessor Electrical and Computer Engineering, University of Virginia在 virginia.edu 的电子邮件经过验证
