| ‘Giant’CdSe/CdS core/shell nanocrystal quantum dots as efficient electroluminescent materials: strong influence of shell thickness on light-emitting diode performance BN Pal, Y Ghosh, S Brovelli, R Laocharoensuk, VI Klimov, ... Nano letters 12 (1), 331-336, 2012 | 465 | 2012 |
| Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors BN Pal, BM Dhar, KC See, HE Katz Nature materials 8 (11), 898-903, 2009 | 333 | 2009 |
| One-dimensional ZnO nanostructure arrays: Synthesis and characterization S Kar, BN Pal, S Chaudhuri, D Chakravorty The Journal of Physical Chemistry B 110 (10), 4605-4611, 2006 | 245 | 2006 |
| High‐Sensitivity p–n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots BN Pal, I Robel, A Mohite, R Laocharoensuk, DJ Werder, VI Klimov Advanced Functional Materials 22 (8), 1741-1748, 2012 | 184 | 2012 |
| Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene W Koh, AY Koposov, JT Stewart, BN Pal, I Robel, JM Pietryga, VI Klimov Scientific reports 3 (1), 2004, 2013 | 162 | 2013 |
| Solution‐Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n‐Channel, Ambipolar, and Nonvolatile Devices BN Pal, P Trottman, J Sun, HE Katz Advanced Functional Materials 18 (12), 1832-1839, 2008 | 136 | 2008 |
| Pentacene-zinc oxide vertical diode with compatible grains and 15-MHz rectification BN Pal, J Sun, BJ Jung, E Choi, AG Andreou, HE Katz ADVANCED MATERIALS-DEERFIELD BEACH THEN WEINHEIM- 20 (5), 1023, 2008 | 115 | 2008 |
| All solution-processed, hybrid light emitting field-effect transistors. K Muhieddine, M Ullah, BN Pal, P Burn, EB Namdas Advanced Materials (Deerfield Beach, Fla.) 26 (37), 6410-6415, 2014 | 92 | 2014 |
| Narrow band green organic photodiodes for imaging DM Lyons, A Armin, M Stolterfoht, RCR Nagiri, RD Jansen-van Vuuren, ... Organic Electronics 15 (11), 2903-2911, 2014 | 89 | 2014 |
| Organic semiconductor devices with enhanced field and environmental responses for novel applications T Someya, B Pal, J Huang, HE Katz MRS bulletin 33 (7), 690-696, 2008 | 71 | 2008 |
| Colloidal ZnO quantum dots based spectrum selective ultraviolet photodetectors Y Kumar, H Kumar, G Rawat, C Kumar, A Sharma, BN Pal, S Jit IEEE Photonics Technology Letters 29 (4), 361-364, 2017 | 60 | 2017 |
| High-performance, solution-processed non-polymeric organic photodiodes IK Kim, BN Pal, M Ullah, PL Burn, SC Lo, P Meredith, EB Namdas Adv. Opt. Mater 3 (1), 50-56, 2015 | 60 | 2015 |
| Correlation between structural, optical and magnetic properties of Mn-doped ZnO P Kumar, BK Singh, BN Pal, PC Pandey Applied Physics A 122, 1-12, 2016 | 53 | 2016 |
| Electrical and optical characteristics of self-powered colloidal CdSe quantum dot-based photodiode H Kumar, Y Kumar, B Mukherjee, G Rawat, C Kumar, BN Pal, S Jit IEEE Journal of Quantum Electronics 53 (3), 1-8, 2017 | 50 | 2017 |
| Selective near-infrared (NIR) photodetectors fabricated with colloidal CdS: Co quantum dots P Maity, SV Singh, S Biring, BN Pal, AK Ghosh Journal of Materials Chemistry C 7 (25), 7725-7733, 2019 | 47 | 2019 |
| Solution processed Li 5 AlO 4 dielectric for low voltage transistor fabrication and its application in metal oxide/quantum dot heterojunction phototransistors A Sharma, NK Chourasia, A Sugathan, Y Kumar, S Jit, SW Liu, A Pandey, ... Journal of Materials Chemistry C 6 (4), 790-798, 2018 | 43 | 2018 |
| Visible-blind Au/ZnO quantum dots-based highly sensitive and spectrum selective Schottky photodiode Y Kumar, H Kumar, B Mukherjee, G Rawat, C Kumar, BN Pal, S Jit IEEE Transactions on Electron Devices 64 (7), 2874-2880, 2017 | 43 | 2017 |
| Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface N Pal, A Sharma, V Acharya, NK Chourasia, S Biring, BN Pal ACS Applied Electronic Materials 2 (1), 25-34, 2019 | 39 | 2019 |
| Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO2 Gate Dielectric A Sharma, NK Chourasia, V Acharya, N Pal, S Biring, SW Liu, BN Pal Electronic Materials Letters 16, 22-34, 2020 | 35 | 2020 |
| Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor NK Chourasia, A Sharma, V Acharya, N Pal, S Biring, BN Pal Journal of Alloys and Compounds 777, 1124-1132, 2019 | 33 | 2019 |
Sajal BiringDepartment of Electronic Engineering, Ming-Chi University of Technology在 mail.mcut.edu.tw 的电子邮件经过验证
