| Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications K Shinohara, DC Regan, Y Tang, AL Corrion, DF Brown, JC Wong, ... IEEE Transactions on Electron Devices 60 (10), 2982-2996, 2013 | 524 | 2013 |
| Highly efficient light-emitting diodes with microcavities EF Schubert, NEJ Hunt, M Micovic, RJ Malik, DL Sivco, AY Cho, GJ Zydzik Science 265 (5174), 943-945, 1994 | 351 | 1994 |
| Ultrahigh-Speed GaN High-Electron-Mobility Transistors Withof 454/444 GHz Y Tang, K Shinohara, D Regan, A Corrion, D Brown, J Wong, A Schmitz, ... IEEE Electron Device Letters 36 (6), 549-551, 2015 | 336 | 2015 |
| Temperature and modulation characteristics of resonant-cavity light-emitting diodes EF Schubert, NEJ Hunt, RJ Malik, M Micovic, DL Miller Journal of Lightwave Technology 14 (7), 1721-1729, 1996 | 197 | 1996 |
| Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications JS Moon, S Wu, D Wong, I Milosavljevic, A Conway, P Hashimoto, M Hu, ... IEEE Electron Device Letters 26 (6), 348-350, 2005 | 170 | 2005 |
| 220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic K Shinohara, A Corrion, D Regan, I Milosavljevic, D Brown, S Burnham, ... 2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010 | 160 | 2010 |
| GaN double heterojunction field effect transistor for microwave and millimeterwave power applications M Micovic, P Hashimoto, M Hu, I Milosavljevic, J Duvall, PJ Willadsen, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 146 | 2004 |
| GaN/AlGaN high electron mobility transistors with fτ of 110 GHz M Micovic, NX Nguyen, P Janke, WS Wong, P Hashimoto, LM McCray, ... Electronics Letters 36 (4), 358-359, 2000 | 146 | 2000 |
| GaN HFET for W-band power applications M Micovic, A Kurdoghlian, P Hashimoto, M Hu, M Antcliffe, PJ Willadsen, ... 2006 International Electron Devices Meeting, 1-3, 2006 | 143 | 2006 |
| 92–96 GHz GaN power amplifiers M Micovic, A Kurdoghlian, A Margomenos, DF Brown, K Shinohara, ... 2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012 | 138 | 2012 |
| Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipoles L Sorba, G Bratina, G Ceccone, A Antonini, JF Walker, M Micovic, ... Physical Review B 43 (3), 2450, 1991 | 138 | 1991 |
| Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K Shinohara, D Regan, A Corrion, D Brown, S Burnham, PJ Willadsen, ... 2011 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2011 | 135 | 2011 |
| Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG K Shinohara, D Regan, A Corrion, D Brown, Y Tang, J Wong, G Candia, ... 2012 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2012 | 130 | 2012 |
| 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via GaN Source Contact Ledge JS Moon, D Wong, M Hu, P Hashimoto, M Antcliffe, C McGuire, M Micovic, ... IEEE Electron Device Letters 29 (8), 834-837, 2008 | 130 | 2008 |
| High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE NX Nguyen, M Micovic, WS Wong, P Hashimoto, LM McCray, P Janke, ... Electronics Letters 36 (5), 468-469, 2000 | 121 | 2000 |
| Gate‐recessed normally‐off GaN‐on‐ Si HEMT using a new O2‐BCl3 digital etching technique SD Burnham, K Boutros, P Hashimoto, C Butler, DWS Wong, M Hu, ... physica status solidi c 7 (7‐8), 2010-2012, 2010 | 117 | 2010 |
| GaN technology for E, W and G-band applications A Margomenos, A Kurdoghlian, M Micovic, K Shinohara, DF Brown, ... 2014 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2014 | 116 | 2014 |
| Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate C Nguyen, JS Moon, W Wong, M Micovic, P Hashimoto US Patent App. 10/214,422, 2004 | 116 | 2004 |
| High power-low noise microwave GaN heterojunction field effect transistor M Micovic, M Antcliffe, T Hussain, P Hashimoto US Patent 7,470,941, 2008 | 111 | 2008 |
| W-band, 5W solid-state power amplifier/combiner J Schellenberg, E Watkins, M Micovic, B Kim, K Han 2010 IEEE MTT-S International Microwave Symposium, 240-243, 2010 | 109 | 2010 |
