| Ion beam handbook for material analysis JW Mayer, E Rimini Elsevier, 2012 | 725 | 2012 |
| A melting model for pulsing‐laser annealing of implanted semiconductors P Baeri, SU Campisano, G Foti, E Rimini Journal of Applied Physics 50 (2), 788-797, 1979 | 508 | 1979 |
| Ion irradiation and defect formation in single layer graphene G Compagnini, F Giannazzo, S Sonde, V Raineri, E Rimini Carbon 47 (14), 3201-3207, 2009 | 272 | 2009 |
| Ion implantation: basics to device fabrication E Rimini Springer Science & Business Media, 1994 | 255 | 1994 |
| Ion-beam-induced epitaxial crystallization and amorphization in silicon F Priolo, E Rimini Materials Science Reports 5 (7-8), 321-379, 1990 | 240 | 1990 |
| Amorphous-to-crystal transition of nitrogen-and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements S Privitera, E Rimini, R Zonca Applied physics letters 85 (15), 3044-3046, 2004 | 234 | 2004 |
| Voids in silicon by He implantation: From basic to applications V Raineri, M Saggio, E Rimini Journal of Materials Research 15 (7), 1449-1477, 2000 | 185 | 2000 |
| Arsenic diffusion in silicon melted by high‐power nanosecond laser pulsing P Baeri, SU Campisano, G Foti, E Rimini Applied Physics Letters 33 (2), 137-140, 1978 | 156 | 1978 |
| Silicon planar technology for single-photon optical detectors E Sciacca, AC Giudice, D Sanfilippo, F Zappa, S Lombardo, R Consentino, ... IEEE Transactions on Electron Devices 50 (4), 918-925, 2003 | 140 | 2003 |
| Screening length and quantum capacitance in graphene by scanning probe microscopy F Giannazzo, S Sonde, V Raineri, E Rimini Nano letters 9 (1), 23-29, 2009 | 136 | 2009 |
| He-vacancy interactions in Si and their influence on bubble formation and evolution V Raineri, S Coffa, E Szilagyi, J Gyulai, E Rimini Physical Review B 61 (2), 937, 2000 | 125 | 2000 |
| Mapping the density of scattering centers limiting the electron mean free path in graphene F Giannazzo, S Sonde, RL Nigro, E Rimini, V Raineri Nano letters 11 (11), 4612-4618, 2011 | 124 | 2011 |
| Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ... Scientific reports 6 (1), 23843, 2016 | 123 | 2016 |
| How far will silicon nanocrystals push the scaling limits of NVMs technologies? B De Salvo, C Gerardi, S Lombardo, T Baron, L Perniola, D Mariolle, ... IEEE International Electron Devices Meeting 2003, 26.1. 1-26.1. 4, 2003 | 116 | 2003 |
| Segregation effects in Cu-implanted Si after laser-pulse melting P Baeri, SU Campisano, G Foti, E Rimini Physical Review Letters 41 (18), 1246, 1978 | 111 | 1978 |
| Kinetics of phase formation in Au—A1 thin films SU Campisano, G Foti, E Rimini, SS Lau, JW Mayer Philosophical Magazine 31 (4), 903-917, 1975 | 106 | 1975 |
| Mechanisms of amorphization in ion implanted crystalline silicon SU Campisano, S Coffa, V Raineri, F Priolo, E Rimini Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1993 | 103 | 1993 |
| Crystal nucleation and growth processes in S Privitera, C Bongiorno, E Rimini, R Zonca Applied physics letters 84 (22), 4448-4450, 2004 | 98 | 2004 |
| Dechanneling by dislocations in ion-implanted Al ST Picraux, E Rimini, G Foti, SU Campisano Physical Review B 18 (5), 2078, 1978 | 97 | 1978 |
| Dependence of trapping and segregation of indium in silicon on the velocity of the liquid‐solid interface P Baeri, JM Poate, SU Campisano, G Foti, E Rimini, AG Cullis Applied Physics Letters 37 (10), 912-914, 1980 | 96 | 1980 |
