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Svenja Mauthe
Svenja Mauthe
ams International AG
在 ams.com 的电子邮件经过验证
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引用次数
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年份
High-speed III-V nanowire photodetector monolithically integrated on Si
S Mauthe, Y Baumgartner, M Sousa, Q Ding, MD Rossell, A Schenk, ...
Nature communications 11 (1), 4565, 2020
1802020
Waveguide coupled III-V photodiodes monolithically integrated on Si
P Wen, P Tiwari, S Mauthe, H Schmid, M Sousa, M Scherrer, M Baumann, ...
Nature communications 13 (1), 909, 2022
632022
InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding
S Mauthe, NV Triviño, Y Baumgartner, M Sousa, D Caimi, T Stöferle, ...
IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 1-7, 2019
372019
Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes
P Staudinger, S Mauthe, KE Moselund, H Schmid
Nano letters 18 (12), 7856-7862, 2018
342018
Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates
BF Mayer, S Wirths, S Mauthe, P Staudinger, M Sousa, J Winiger, ...
IEEE Photonics Technology Letters 31 (13), 1021-1024, 2019
302019
Hybrid III–V Silicon Photonic Crystal Cavity Emitting at Telecom Wavelengths
S Mauthe, P Tiwari, M Scherrer, D Caimi, M Sousa, H Schmid, ...
Nano Letters 20 (12), 8768-8772, 2020
252020
Wurtzite InP microdisks: from epitaxy to room-temperature lasing
P Staudinger, S Mauthe, NV Triviño, S Reidt, KE Moselund, H Schmid
Nanotechnology 32 (7), 075605, 2020
222020
Scaling of metal-clad InP nanodisk lasers: optical performance and thermal effects
P Tiwari, P Wen, D Caimi, S Mauthe, NV Triviño, M Sousa, KE Moselund
Optics Express 29 (3), 3915-3927, 2021
182021
Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
C Convertino, CB Zota, Y Baumgartner, P Staudinger, M Sousa, S Mauthe, ...
2019 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2019
182019
In-Plane Monolithic Integration of Scaled III-V Photonic Devices
M Scherrer, N Vico Triviño, S Mauthe, P Tiwari, H Schmid, KE Moselund
Applied Sciences 11 (4), 1887, 2021
132021
Monolithically integrated InGaAs microdisk lasers on silicon using template-assisted selective epitaxy
S Mauthe, B Mayer, M Sousa, G Villares, P Staudinger, H Schmid, ...
Nanophotonics VII 10672, 150-158, 2018
132018
Ultra-thin III-V photodetectors epitaxially integrated on si with bandwidth exceeding 25 GHz
S Mauthe, Y Baumgartner, S Sant, Q Ding, M Sousa, L Czornomaz, ...
2020 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2020
112020
Monolithic Integration of III-V on silicon for photonic and electronic applications
S Mauthe, H Schmid, B Mayer, S Wirths, C Convertino, Y Baumgartner, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
72018
Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps OOK
P Tiwari, P Wen, S Mauthe, M Baumann, BI Bitachon, H Schmid, ...
2021 Optical Fiber Communications Conference and Exhibition (OFC), 1-3, 2021
52021
Monolithic integration of III-V microdisk lasers on silicon
S Mauthe, NV Trivino, M Sousa, P Staudinger, Y Baumgartner, P Tiwari, ...
2019 International Conference on Optical MEMS and Nanophotonics (OMN), 32-33, 2019
52019
Monolithic integration of multiple III-V semiconductors on Si
H Schmid, B Mayer, J Gooth, S Wirths, L Czornomaz, H Riel, S Mauthe, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
52017
Modeling whispering gallery mode III–V micro-lasers monolithically integrated on Silicon
S Sant, A Schenk, B Mayer, S Wirths, S Mauthe, H Schmid, KE Moselund
2018 International Conference on Numerical Simulation of Optoelectronic …, 2018
42018
Plasmonic laser
S Mauthe, KE Moselund
US Patent 11,056,856, 2021
22021
InGaAs microdisk cavities monolithically integrated on Si with room temperature emission at 1530 nm
P Tiwari, A Fischer, S Mauthe, E Brugnolotto, NV Triviño, M Sousa, ...
The European Conference on Lasers and Electro-Optics, ck_4_2, 2021
22021
Method for fabricating a semiconductor device
S Mauthe, M Sousa, F Konemann, KE Moselund
US Patent 11,011,377, 2021
22021
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