受强制性开放获取政策约束的文章 - tatsuro maeda了解详情
无法在其他位置公开访问的文章：9 篇
Tensile-strained GeSn metal–oxide–semiconductor field-effect transistor devices on Si (111) using solid phase epitaxy
RR Lieten, T Maeda, W Jevasuwan, H Hattori, N Uchida, S Miura, ...
Applied Physics Express 6 (10), 101301, 2013
强制性开放获取政策： Research Foundation (Flanders)
Ultrathin GeSn p-channel MOSFETs grown directly on Si (111) substrate using solid phase epitaxy
T Maeda, W Jevasuwan, H Hattori, N Uchida, S Miura, M Tanaka, ...
Japanese Journal of Applied Physics 54 (4S), 04DA07, 2015
强制性开放获取政策： Research Foundation (Flanders)
Integration design and process of 3-D heterogeneous 6T SRAM with double layer transferred Ge/2Si CFET and IGZO pass gates for 42% reduced cell size
XR Yu, MH Chuang, SW Chang, WH Chang, TC Hong, CH Chiang, ...
2022 International Electron Devices Meeting (IEDM), 20.5. 1-20.5. 4, 2022
强制性开放获取政策： Japan Science and Technology Agency
Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique
WH Chang, H Hattori, H Ishii, T Irisawa, N Uchida, T Maeda
Materials Science in Semiconductor Processing 70, 123-126, 2017
强制性开放获取政策： Research Foundation (Flanders)
First demonstration of vertical stacked hetero-oriented n-Ge (111)/p-Ge (100) CFET toward mobility balance engineering
XR Yu, WH Chang, TC Hong, PJ Sung, A Agarwal, GL Luo, CT Wu, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
强制性开放获取政策： Japan Science and Technology Agency
Heat transport properties of alumina gate insulator films on Ge substrates fabricated by atomic layer deposition
N Uchida, Y Nakajima, L Bolotov, WH Chang, T Maeda, Y Ohishi
Materials Science in Semiconductor Processing 121, 105396, 2021
强制性开放获取政策： Research Foundation (Flanders)
High-Responsivity Ge Schottky Photodetectors With Short-Wave Infrared Transparent Conductive Oxide Electrodes
H Ishii, WH Chang, H Ishii, T Koida, H Fujishiro, T Maeda
IEEE Electron Device Letters, 2023
强制性开放获取政策： Japan Science and Technology Agency
First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure
XR Yu, CC Hsieh, MH Chuang, MY Chiu, TC Sun, WZ Geng, WH Chang, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策： Japan Science and Technology Agency
Schottky barrier contact on In0. 53Ga0. 47As with short-wave infrared transparent conductive oxide
T Maeda, K Oishi, H Ishii, H Ishii, WH Chang, T Shimizu, A Endoh, ...
Applied Physics Letters 121 (23), 2022
强制性开放获取政策： Japan Science and Technology Agency
可在其他位置公开访问的文章：2 篇
Structural and optical properties of amorphous and crystalline GeSn layers on Si
RR Lieten, C Fleischmann, S Peters, NM Santos, LM Amorim, Y Shimura, ...
ECS Journal of Solid State Science and Technology 3 (12), P403, 2014
强制性开放获取政策： Research Foundation (Flanders)
Solid phase epitaxy of GeSn alloys on silicon and integration in MOSFET devices
RR Lieten, T Maeda, JW Seo, W Jevasuwan, H Hattori, N Uchida, S Miura, ...
ECS Transactions 64 (11), 149, 2014
强制性开放获取政策： Research Foundation (Flanders)
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