受强制性开放获取政策约束的文章 - Gunnar Kusch了解详情
无法在其他位置公开访问的文章：3 篇
Efficient and Bright Deep‐red Light‐emitting Diodes Based on a Lateral 0D/3D perovskite Heterostructure
Y Ke, J Guo, D Kong, J Wang, G Kusch, C Lin, D Liu, Z Kuang, D Qian, ...
Advanced Materials, 2207301, 2022
强制性开放获取政策： 国家自然科学基金委员会, UK Engineering and Physical Sciences Research Council
Cathodoluminescence Study of 68 MeV Proton-Irradiated Ultra-Thin GaAs Solar Cells
A Barthel, L Sayre, F Lang, G Kusch, J Bundesmann, A Denker, R Oliver, ...
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 1070-1074, 2020
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, European Commission
Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence
K Loeto, G Kusch, S Ghosh, MJ Kappers, RA Oliver
Micron 172, 103489, 2023
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
可在其他位置公开访问的文章：55 篇
Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface
B Zhao, Y Lian, L Cui, G Divitini, G Kusch, E Ruggeri, F Auras, W Li, ...
Nature Electronics 3 (11), 704-710, 2020
强制性开放获取政策： 国家自然科学基金委员会, UK Engineering and Physical Sciences Research …
Halide homogenization for high-performance blue perovskite electroluminescence
L Cheng, C Yi, Y Tong, L Zhu, G Kusch, X Wang, X Wang, T Jiang, ...
Research, 2020
强制性开放获取政策： 国家自然科学基金委员会, UK Engineering and Physical Sciences Research …
Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs2AgBiBr6 Thin Films
Z Li, SP Senanayak, L Dai, G Kusch, R Shivanna, Y Zhang, D Pradhan, ...
Advanced Functional Materials 31 (49), 2104981, 2021
强制性开放获取政策： Department of Science & Technology, India, UK Engineering and Physical …
Over 15% efficient wide-band-gap Cu (In, Ga) S2 solar cell: Suppressing bulk and interface recombination through composition engineering
S Shukla, M Sood, D Adeleye, S Peedle, G Kusch, D Dahliah, ...
Joule 5 (7), 1816-1831, 2021
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Halide homogenization for low energy loss in 2-eV-bandgap perovskites and increased efficiency in all-perovskite triple-junction solar cells
J Wang, L Zeng, D Zhang, A Maxwell, H Chen, K Datta, A Caiazzo, ...
Nature Energy 9 (1), 70-80, 2024
强制性开放获取政策： US Department of Energy, Canadian Institutes of Health Research, Natural …
Deep UV Emission from Highly Ordered AlGaN/AlN Core–Shell Nanorods
PM Coulon, G Kusch, RW Martin, PA Shields
ACS applied materials & interfaces 10 (39), 33441-33449, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Influence of substrate miscut angle on surface morphology and luminescence properties of AlGaN
G Kusch, H Li, PR Edwards, J Bruckbauer, TC Sadler, PJ Parbrook, ...
Applied Physics Letters 104 (9), 092114, 2014
强制性开放获取政策： Higher Education Authority, Ireland, Science Foundation Ireland, UK …
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
G Kusch, M Nouf-Allehiani, F Mehnke, C Kuhn, PR Edwards, T Wernicke, ...
Applied Physics Letters 107 (7), 072103, 2015
强制性开放获取政策： German Research Foundation, UK Engineering and Physical Sciences Research …
Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
PM Coulon, JR Pugh, M Athanasiou, G Kusch, ED Le Boulbar, A Sarua, ...
Optics Express 25 (23), 28246-28257, 2017
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Hybrid Top‐Down/Bottom‐Up Fabrication of Regular Arrays of AlN Nanorods for Deep‐UV Core–Shell LEDs
PM Coulon, G Kusch, ED Le Boulbar, P Chausse, C Bryce, RW Martin, ...
physica status solidi (b) 255 (5), 1700445, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
S Walde, S Hagedorn, PM Coulon, A Mogilatenko, C Netzel, J Weinrich, ...
Journal of Crystal Growth 531, 125343, 2020
强制性开放获取政策： German Research Foundation, UK Engineering and Physical Sciences Research …
Analysis of doping concentration and composition in wide bandgap AlGaN: Si by wavelength dispersive x-ray spectroscopy
G Kusch, F Mehnke, J Enslin, PR Edwards, T Wernicke, M Kneissl, ...
Semiconductor Science and Technology 32 (3), 035020, 2017
强制性开放获取政策： German Research Foundation, UK Engineering and Physical Sciences Research …
Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence
G Kusch, EJ Comish, K Loeto, S Hammersley, MJ Kappers, P Dawson, ...
Nanoscale 14 (2), 402-409, 2022
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Hybrid top-down/bottom-up fabrication of a highly uniform and organized faceted AlN nanorod scaffold
PM Coulon, G Kusch, P Fletcher, P Chausse, R Martin, P Shields
Materials 11 (7), 1140, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films
JF Orri, EM Tennyson, G Kusch, G Divitini, S Macpherson, RA Oliver, ...
Nano Express 2 (2), 024002, 2021
强制性开放获取政策： UK Engineering and Physical Sciences Research Council, European Commission
Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods
M Conroy, H Li, G Kusch, C Zhao, B Ooi, PR Edwards, RW Martin, ...
Nanoscale 8 (21), 11019-11026, 2016
强制性开放获取政策： Higher Education Authority, Ireland, Science Foundation Ireland, UK …
A systematic comparison of polar and semipolar Si-doped AlGaN alloys with high AlN content
L Spasevski, G Kusch, P Pampili, VZ Zubialevich, DV Dinh, J Bruckbauer, ...
Journal of Physics D: Applied Physics 54 (3), 035302, 2020
强制性开放获取政策： Science Foundation Ireland, UK Engineering and Physical Sciences Research …
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