| Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ... Journal of applied physics 98 (3), 2005 | 1463 | 2005 |
| Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang Applied physics letters 91 (1), 2007 | 511 | 2007 |
| Identification of a determining parameter for resistive switching of TiO2 thin films C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang Applied Physics Letters 86 (26), 2005 | 410 | 2005 |
| Memristors for Energy‐Efficient New Computing Paradigms DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang Advanced Electronic Materials 2 (9), 1600090, 2016 | 366 | 2016 |
| High‐speed and low‐energy nitride memristors BJ Choi, AC Torrezan, JP Strachan, PG Kotula, AJ Lohn, MJ Marinella, ... Advanced Functional Materials 26 (29), 5290-5296, 2016 | 327 | 2016 |
| Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films KM Kim, BJ Choi, CS Hwang Applied physics letters 90 (24), 2007 | 269 | 2007 |
| Engineering nonlinearity into memristors for passive crossbar applications J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ... Applied Physics Letters 100 (11), 2012 | 253 | 2012 |
| A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ... Nanotechnology 22 (25), 254010, 2011 | 225 | 2011 |
| Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch BJ Choi, AC Torrezan, KJ Norris, F Miao, JP Strachan, MX Zhang, ... Nano letters 13 (7), 3213-3217, 2013 | 222 | 2013 |
| Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ... Nano Letters 16 (11), 6724-6732, 2016 | 217 | 2016 |
| Study on the resistive switching time of TiO2 thin films BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ... Applied physics letters 89 (1), 2006 | 156 | 2006 |
| Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang Electrochemical and solid-state letters 9 (12), G343, 2006 | 153 | 2006 |
| Trilayer tunnel selectors for memristor memory cells BJ Choi, J Zhang, K Norris, G Gibson, KM Kim, W Jackson, MXM Zhang, ... Advanced Materials (Deerfield Beach, Fla.) 28 (2), 356, 2016 | 130 | 2016 |
| Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM BJ Choi, ABK Chen, X Yang, IW Chen Advanced Materials 23 (33), 3847-3852, 2011 | 126 | 2011 |
| A physical model of switching dynamics in tantalum oxide memristive devices PR Mickel, AJ Lohn, B Joon Choi, J Joshua Yang, MX Zhang, ... Applied Physics Letters 102 (22), 2013 | 102 | 2013 |
| (In, Sn) 2O3∕ TiO2∕ Pt Schottky-type diode switch for the TiO2 resistive switching memory array YC Shin, J Song, KM Kim, BJ Choi, S Choi, HJ Lee, GH Kim, T Eom, ... Applied Physics Letters 92 (16), 2008 | 101 | 2008 |
| Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources BJ Choi, S Choi, YC Shin, CS Hwang, JW Lee, J Jeong, YJ Kim, ... Journal of the electrochemical society 154 (4), H318, 2007 | 98 | 2007 |
| Nitride memristors BJ Choi, JJ Yang, MX Zhang, KJ Norris, DAA Ohlberg, NP Kobayashi, ... Applied Physics A 109 (1), 1-4, 2012 | 90 | 2012 |
| Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes KM Kim, BJ Choi, DS Jeong, CS Hwang, S Han Applied physics letters 89 (16), 2006 | 86 | 2006 |
| Leaky integrate-and-fire neuron circuit based on floating-gate integrator V Kornijcuk, H Lim, JY Seok, G Kim, SK Kim, I Kim, BJ Choi, DS Jeong Frontiers in neuroscience 10, 212, 2016 | 80 | 2016 |
Hogyoung KimSeoul National University of Science and Technology在 seoultech.ac.kr 的电子邮件经过验证
