受强制性开放获取政策约束的文章 - Riko I Made了解详情
无法在其他位置公开访问的文章：8 篇
Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
GJ Syaranamual, WA Sasangka, RI Made, S Arulkumaran, GI Ng, SC Foo, ...
Microelectronics Reliability 64, 589-593, 2016
强制性开放获取政策： A*Star, Singapore, National Research Foundation, Singapore
MOCVD growth of GaN on SEMI-spec 200 mm Si
L Zhang, KH Lee, IM Riko, CC Huang, A Kadir, KE Lee, SJ Chua, ...
Semiconductor Science and Technology 32 (6), 065001, 2017
强制性开放获取政策： National Research Foundation, Singapore
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ...
Journal of Crystal Growth 478, 64-70, 2017
强制性开放获取政策： National Research Foundation, Singapore
Germanium-on-insulator virtual substrate for InGaP epitaxy
S Bao, KH Lee, C Wang, B Wang, RI Made, SF Yoon, J Michel, ...
Materials Science in Semiconductor Processing 70, 17-23, 2017
强制性开放获取政策： National Research Foundation, Singapore
MOCVD growth of high quality InGaAs HEMT layers on large scale Si wafers for heterogeneous integration with Si CMOS
XS Nguyen, S Yadav, KH Lee, D Kohen, A Kumar, RI Made, KEK Lee, ...
IEEE Transactions on Semiconductor Manufacturing 30 (4), 456-461, 2017
强制性开放获取政策： National Research Foundation, Singapore
Control wafer bow of InGaP on 200 mm Si by strain engineering
B Wang, S Bao, RI Made, KH Lee, C Wang, KEK Lee, EA Fitzgerald, ...
Semiconductor Science and Technology 32 (12), 125013, 2017
强制性开放获取政策： National Research Foundation, Singapore
Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe
B Wang, C Wang, DA Kohen, RI Made, KEK Lee, T Kim, T Milakovich, ...
Journal of Crystal Growth 441, 78-83, 2016
强制性开放获取政策： US Department of Energy, National Research Foundation, Singapore
Closed‐Loop Multi‐Objective Optimization for Cu–Sb–S Photo‐Electrocatalytic Materials’ Discovery
Y Bai, ZHJ Khoo, R I Made, H Xie, CYJ Lim, AD Handoko, V Chellappan, ...
Advanced Materials 36 (2), 2304269, 2024
强制性开放获取政策： A*Star, Singapore
可在其他位置公开访问的文章：13 篇
Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films
CY Khoo, H Liu, WA Sasangka, RI Made, N Tamura, M Kunz, AS Budiman, ...
Journal of materials science 51, 1864-1872, 2016
强制性开放获取政策： US National Science Foundation, US Department of Energy, National Research …
Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing
WA Sasangka, GJ Syaranamual, RI Made, CV Thompson, CL Gan
AIP Advances 6 (9), 2016
强制性开放获取政策： US Department of Energy, A*Star, Singapore, National Research Foundation …
Noble metal alloy thin films by atomic layer deposition and rapid Joule heating
Y Guo, Y Zou, C Cheng, L Wang, RI Made, R Goei, KW Tan, S Li, AIY Tok
Scientific Reports 12 (1), 2522, 2022
强制性开放获取政策： A*Star, Singapore
Heteroepitaxial growth of In0. 30Ga0. 70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
D Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ...
AIP Advances 6 (8), 2016
强制性开放获取政策： National Research Foundation, Singapore
Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
WA Sasangka, GJ Syaranamual, Y Gao, RI Made, CL Gan, CV Thompson
Microelectronics Reliability 76, 287-291, 2017
强制性开放获取政策： A*Star, Singapore, National Research Foundation, Singapore
An object-oriented framework to enable workflow evolution across materials acceleration platforms
CJ Leong, KYA Low, J Recatala-Gomez, PQ Velasco, E Vissol-Gaudin, ...
Matter 5 (10), 3124-3134, 2022
强制性开放获取政策： A*Star, Singapore
Characterisation of defects generated during constant current InGaN-on-silicon LED operation
RI Made, Y Gao, GJ Syaranamual, WA Sasangka, L Zhang, XS Nguyen, ...
Microelectronics Reliability 76, 561-565, 2017
强制性开放获取政策： National Research Foundation, Singapore
Pb-Free glass paste: a metallization-free die-attachment solution for high-temperature application on ceramic substrates
A Sharif, JZ Lim, RI Made, FL Lau, EJR Phua, JD Lim, CC Wong, CL Gan, ...
Journal of electronic materials 42, 2667-2676, 2013
强制性开放获取政策： A*Star, Singapore
Direct bandgap photoluminescence from n-type indirect GaInP alloys
C Wang, B Wang, RI Made, SF Yoon, J Michel
Photonics Research 5 (3), 239-244, 2017
强制性开放获取政策： National Research Foundation, Singapore
Machine learning-assisted optimization of multi-metal hydroxide electrocatalysts for overall water splitting
CYJ Lim, RI Made, ZHJ Khoo, CK Ng, Y Bai, J Wang, G Yang, ...
Materials Horizons 10 (11), 5022-5031, 2023
强制性开放获取政策： A*Star, Singapore
Towards a greener electrosynthesis: pairing machine learning and 3D printing for rapid optimisation of anodic trifluoromethylation
NK Gupta, Y Guo, SY Chang, J Lin, ZHJ Khoo, RI Made, ZE Ooi, CYJ Lim, ...
RSC Sustainability 2 (2), 536-545, 2024
强制性开放获取政策： A*Star, Singapore
Fabrication of III-V virtual substrate on 200 mm silicon for III-V and Si devices integration
D Kohen, RI Made, S Bao, KH Lee, KEK Lee, CS Tan, SF Yoon, ...
CS MANTECH Conference, Scottsdale, Arizona, 18-21, 2015
强制性开放获取政策： National Research Foundation, Singapore
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