| Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures B Mukherjee, A Zulkefli, K Watanabe, T Taniguchi, Y Wakayama, ... Advanced Functional Materials (Q1, IF: 18.8) 30 (42), 2001688, 2020 | 65 | 2020 |
| Enhanced Quantum Efficiency in Vertical Mixed-Thickness n-ReS2/p-Si Heterojunction Photodiodes B Mukherjee, A Zulkefli, R Hayakawa, Y Wakayama, S Nakaharai ACS Photonics (Q1, IF: 7.5) 6 (9), 2277-2286, 2019 | 32 | 2019 |
| Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2-FETs under Light-Assisted and Gate-Bias Tunable Operation A Zulkefli, B Mukherjee, R Sahara, R Hayakawa, T Iwasaki, ... ACS Applied Materials & Interfaces (Q1, IF: 9.2) 13 (36), 43030–43038, 2021 | 24 | 2021 |
| Three-dimensional finite element method simulation of perforated graphene Nano-Electro-Mechanical (NEM) switches MA Zulkefli, MA Mohamed, KS Siow, B Yeop Majlis, J Kulothungan, ... Micromachines (Q2, IF: 2.9) 8 (8), 236, 2017 | 20 | 2017 |
| Dual‐Gate Anti‐Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations Y Shingaya, A Zulkefli, T Iwasaki, R Hayakawa, S Nakaharai, K Watanabe, ... Advanced Electronic Materials 9 (1), 2200704, 2022 | 17 | 2022 |
| Stress analysis of perforated graphene nano-electro-mechanical (NEM) contact switches by 3D finite element simulation MA Zulkefli, MA Mohamed, KS Siow, BY Majlis, J Kulothungan, ... Microsystem Technologies (Q2, IF: 2.3) 24 (2), 1179-1187, 2018 | 10 | 2018 |
| Light‐Assisted and Gate‐Tunable Oxygen Gas Sensor Based on Rhenium Disulfide Field‐Effect Transistors A Zulkefli, B Mukherjee, R Hayakawa, T Iwasaki, S Nakaharai, ... Physica Status Solidi (RRL)–Rapid Research Letters (Q1, IF: 2.8) 14 (11 …, 2020 | 8 | 2020 |
| Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors A Zulkefli, B Mukherjee, T Iwasaki, R Hayakawa, S Nakaharai, ... Japanese Journal of Applied Physics (Q2, IF: 1.5) 60 (SB), SBBH01, 2021 | 5 | 2021 |
| Optimization of beam length and air gap of suspended graphene NEMS switch for low pull-in voltage application MA Zulkefli, MA Mohamed, KS Siow, BY Majlis 2016 IEEE International Conference on Semiconductor Electronics (ICSE), 29-32, 2016 | 3 | 2016 |
| Low-frequency noise in hBN/MoS2/hBN transistor at cryogenic temperatures toward low-noise cryo-CMOS device applications S Nakaharai, T Arakawa, A Zulkefli, T Iwasaki, K Watanabe, T Taniguchi, ... Applied Physics Letters 122 (26), 2023 | 1 | 2023 |
| Nanoelectromechanical Switch Devices Based on Graphene and Carbon Nanotube (CNT) MA Zulkefli, MA Mohamed, KS Slow, B YeopMajlis Sains Malaysiana (Q2, IF: 1.0) 47 (3), 619-633, 2018 | 1 | 2018 |
| Surface Defects Originated Photoresponse Study in hBN-ReS2 FETs A Zulkefli, MH Johari 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 25-27, 2023 | | 2023 |
| Evaluation of Cross-Contamination Risk during CMOS Devices Fabrication in an Industrial Silicon Wafer Processing A Zulkefli, I Umar, V Manaoogaran, W Hidayatulhusna, OG Kai, D Samail, ... 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 47-49, 2023 | | 2023 |
| Effect of Light Illumination towards Enhanced Selectivity of Volatile Organic Compound Gas Sensor using a Single-Device ReS2 FET A Zulkefli, B Mukherjee, R Sahara, R Hayakawa, T Iwasaki, Y Wakayama, ... 2021 International Conference on Solid State Devices and Materials (SSDM2021 …, 2021 | | 2021 |
| Gate-Bias Assisted Humidity Sensor based on ReS2 Field-Effect Transistors A Zulkefli, B Mukherjee, T Iwasaki, R Hayakawa, S Nakaharai, ... 2020 International Conference on Solid State Devices and Materials (SSDM2020 …, 2020 | | 2020 |
| Role of Traps in Few Layer n-ReS2 Phototransistor on top of p-MoTe2 Layer B Mukherjee, A Zulkefli, K Ueno, Y Wakayama, S Nakaharai The 79th JSAP Autumn Meeting 21 (21p-PB3-4), 2018 | | 2018 |
| Charge Trapping and Hysteresis Behavior in ReS2/SiO2 and ReS2/hBN Field Effect Transistors A Zulkefli, B Mukherjee, K Watanabe, T Taniguchi, Y Wakayama, ... The 79th JSAP Autumn Meeting 21 (21p-PB3-5), 2018 | | 2018 |
| Few-Layer ReS2 based Vertical pn van der Waals Junction for Photosensing B Mukherjee, A Zulkefli, R Hayakawa, Y Wakayama, S Nakaharai 2018 International Conference on Solid State Devices and Materials (SSDM2018 …, 2018 | | 2018 |
Mohd Ambri MohamedInstitute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia在 ukm.edu.my 的电子邮件经过验证
