| Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model N Kumar, S Kumar, PK Kaushik, A Gupta, P Singh IEEE Transactions on Electron Devices 70 (6), 2934-2940, 2023 | 16 | 2023 |
| Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET N Kumar, PK Kaushik, A Gupta, P Singh Nanotechnology 33 (33), 335201, 2022 | 14 | 2022 |
| Impact of surface states and aluminum mole fraction on surface potential and 2DEG in AlGaN/GaN HEMTs PK Kaushik, SK Singh, A Gupta, A Basu, EY Chang Nanoscale Research Letters 16, 1-9, 2021 | 14 | 2021 |
| Thermal conductivity model to analyze the thermal implications in nanowire FETs N Kumar, PK Kaushik, S Kumar, A Gupta, P Singh IEEE Transactions on Electron Devices 69 (11), 6388-6393, 2022 | 12 | 2022 |
| Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs PK Kaushik, SK Singh, A Gupta, A Basu IEEE Transactions on Electron Devices 68 (12), 6033-6038, 2021 | 5 | 2021 |
| Self-heating effects (SHEs) in gate-all-around FETs with horizontally stacked multiple junctionless nanowires N Kumar, PK Kaushik, A Gupta, P Singh 2022 IEEE Delhi Section Conference (DELCON), 1-4, 2022 | 4 | 2022 |
| DC, RF and Noise Characterization of AlGaN/GaN HEMT S Awasthi, V Kumar, PK Shrivastava, PK Kaushik, A Gupta 2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON), 1-3, 2023 | 3 | 2023 |
| Simulation-based study of current gain peaks h 21 at low gate bias in AlGaN/GaN HEMTs PK Kaushik, S Awasthi, N Kumar, U Goyal, M Mishra, A Gupta, A Basu Engineering Research Express 4 (2), 025042, 2022 | 3 | 2022 |
| Drain-extended MOS design using High-k dielectric to control off-state BTBT with enhanced switching performance AG Shraddha Pali, Pragyey Kumar Kaushik Engineering Research Express, 2022 | 2 | 2022 |
| Effect of Temperature on Dynamic Parameters of Junctionless Multiple Nanowire Field-Effect Transistors N Kumar, PK Kaushik, A Gupta, P Singh 2022 IEEE Delhi Section Conference (DELCON), 1-4, 2022 | 2 | 2022 |
| An improved parasitic resistance extraction strategy alongside the effect of Cds at low gate bias voltages for AlGaN/GaN HEMTs PK Kaushik, SK Singh, A Gupta, A Basu Engineering Research Express 3 (1), 015009, 2021 | 2 | 2021 |
| Extraction and de-embedding of S-parameters using small-signal modeling for AlGaN/GaN HEMTs PK Kaushik, U Goyal 2017 14th IEEE India Council International Conference (INDICON), 1-6, 2017 | 2 | 2017 |
| Comparative Analysis of TCAD augmented ML Algorithms in modeling of AlGaN/GaN HEMTs S Awasthi, PK Kaushik, V Kumar, A Gupta 2023 2nd Edition of IEEE Delhi Section Flagship Conference (DELCON), 1-5, 2023 | 1 | 2023 |
| Small signal model and RF performance analysis of InAs/GaSb hetero-junction tunneling field effect transistor SK Singh, PK Kaushik, RK Kakkerla, A Gupta, D Anandan, V Nagarajan, ... Engineering Research Express 2 (3), 035004, 2020 | 1 | 2020 |
| Modeling and Simulation of Bias Dependent Behavior in GaN HEMT for RF Applications PK Kaushik Delhi, 2022 | | 2022 |
| An effect of source/drain spacing in AlGaN/GaN HEMT on linearity to improve device reliability PK Kaushik, SK Singh, A Gupta, A Basu 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-3, 2020 | | 2020 |
| Impact of Surface Trap States on 2-DEG and Barrier Layer Conduction Band in AlGaN/GaN HEMT PK Kaushik, G Ahmad, A Gupta, A Basu 2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-3, 2020 | | 2020 |
| Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT PK Kaushik, SK Singh, A Gupta, A Basu, EY Chang 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 117-118, 2020 | | 2020 |
| MODEL PARAMETER EXTRACTION OF AlGaN/GaN HEMT AT MICROWAVE FREQUENCY PK KAUSHIK | | 2016 |
Dr. Pushpapraj SinghAssociate Professor, Indian Institute of Technology, Delhi在 iitd.ac.in 的电子邮件经过验证
