| Composition dependence of optical phonon energies and Raman line broadening in hexagonal alloys VY Davydov, IN Goncharuk, AN Smirnov, AE Nikolaev, WV Lundin, ... Physical Review B 65 (12), 125203, 2002 | 180 | 2002 |
| High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ... Applied physics letters 75 (4), 484-486, 1999 | 93 | 1999 |
| Insulating GaN: Zn layers grown by hydride vapor phase epitaxy on SiC substrates NI Kuznetsov, AE Nikolaev, AS Zubrilov, YV Melnik, VA Dmitriev Applied physics letters 75 (20), 3138-3140, 1999 | 86 | 1999 |
| III-V compounds semiconductor device with an AlxByInzGa1-xy-zN non continuous quantum dot layer AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev US Patent 6,479,839, 2002 | 76 | 2002 |
| Properties of free-standing GaN bulk crystals grown by HVPE Y Melnik, A Nikolaev, I Nikitina, K Vassilevski, V Dmitriev MRS Online Proceedings Library (OPL) 482, 269, 1997 | 68 | 1997 |
| Hydrogen effects in III-nitride MOVPE EV Yakovlev, RA Talalaev, AS Segal, AV Lobanova, WV Lundin, ... Journal of Crystal Growth 310 (23), 4862-4866, 2008 | 66 | 2008 |
| AlN wafers fabricated by hydride vapor phase epitaxy A Nikolaev, I Nikitina, A Zubrilov, M Mynbaeva, Y Melnik, V Dmitriev MRS Internet Journal of Nitride Semiconductor Research 5, 432-437, 2000 | 56 | 2000 |
| Fermi level dependence of hydrogen diffusivity in GaN AY Polyakov, NB Smirnov, SJ Pearton, F Ren, B Theys, F Jomard, ... Applied Physics Letters 79 (12), 1834-1836, 2001 | 49 | 2001 |
| X-ray determination of threading dislocation densities in GaN/Al2O3 (0001) films grown by metalorganic vapor phase epitaxy VS Kopp, VM Kaganer, MV Baidakova, WV Lundin, AE Nikolaev, ... journal of Applied Physics 115 (7), 2014 | 48 | 2014 |
| Blackbody-like emission of terahertz radiation from AlGaN/GaN heterostructure under electron heating in lateral electric field VA Shalygin, LE Vorobjev, DA Firsov, AN Sofronov, GA Melentyev, ... Journal of Applied Physics 109 (7), 2011 | 45 | 2011 |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice WV Lundin, AE Nikolaev, AV Sakharov, EE Zavarin, GA Valkovskiy, ... Journal of Crystal Growth 315 (1), 267-271, 2011 | 44 | 2011 |
| III-V compound semiconductor device with an AlxByInzGa1-xy-zN1-a-bPaAsb non-continuous quantum dot layer AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev US Patent 6,849,862, 2005 | 40 | 2005 |
| Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE DV Tsvetkov, AE Nikolaev, VA Dmitriev US Patent 6,660,083, 2003 | 40 | 2003 |
| High-temperature hardness of bulk single-crystal AlN I Yonenaga, A Nikolaev, Y Melnik, V Dmitriev MRS Online Proceedings Library (OPL) 693, I10. 4.1, 2001 | 40 | 2001 |
| Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN: Mg layers WV Lundin, AV Sakharov, EE Zavarin, MA Sinitsyn, AE Nikolaev, ... Semiconductors 43 (7), 963-967, 2009 | 38 | 2009 |
| Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE DV Tsvetkov, AE Nikolaev, VA Dmitriev US Patent 6,706,119, 2004 | 37 | 2004 |
| AlN substrates: fabrication via vapor phase growth and characterization Y Melnik, V Soukhoveev, V Ivantsov, V Sizov, A Pechnikov, K Tsvetkov, ... physica status solidi (a) 200 (1), 22-25, 2003 | 37 | 2003 |
| Fabrication and characterization of heterojunction diodes with HVPE-grown GaN on 4H-SiC E Danielsson, CM Zetterling, M Ostling, A Nikolaev, IP Nikitina, V Dmitriev IEEE Transactions on Electron Devices 48 (3), 444-449, 2001 | 37 | 2001 |
| Method of epitaxially growing submicron group III nitride layers utilizing HVPE DV Tsvetkov, AE Nikolaev, VA Dmitriev US Patent 6,656,272, 2003 | 36 | 2003 |
| Method for growing p-type III-V compound material utilizing HVPE techniques AE Nikolaev, YV Melnik, KV Vassilevski, VA Dmitriev US Patent 6,555,452, 2003 | 34 | 2003 |
Konstantin Vasilevskiy (Vassilevski)Senior Research Associate, Newcastle University在 ncl.ac.uk 的电子邮件经过验证
