| Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP (001), InP (111) B, and InP (011) surfaces JS Lee, S Choi, M Pendharkar, DJ Pennachio, B Markman, M Seas, ... Physical Review Materials 3 (8), 084606, 2019 | 67 | 2019 |
| Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP (001), InP (111) B, and InP (011) surfaces JS Lee, S Choi, M Pendharkar, DJ Pennachio, B Markman, M Seas, ... Physical Review Materials 3 (8), 084606, 2019 | 67 | 2019 |
| 100-340GHz Systems: Transistors and Applications MJW Rodwell, Y Fang, J Rode, J Wu, B Markman, STŠ Brunelli, J Klamkin, ... 2018 IEEE International Electron Devices Meeting (IEDM), 14.3. 1-14.3. 4, 2018 | 38 | 2018 |
| New strategy for the growth of complex heterostructures based on different 2D materials M Cattelan, B Markman, G Lucchini, PK Das, I Vobornik, JA Robinson, ... Chemistry of Materials 27 (11), 4105-4113, 2015 | 38 | 2015 |
| Lg= 30 nm InAs Channel MOSFETs Exhibiting fmax= 410 GHz and ft= 357 GHz J Wu, Y Fang, B Markman, HY Tseng, MJW Rodwell IEEE Electron Device Letters, 2018 | 31 | 2018 |
| Horizontal Heterojunction Integration via Template-Assisted Selective Epitaxy ST Šuran Brunelli, A Goswami, B Markman, HY Tseng, M Rodwell, ... Crystal Growth & Design 19 (12), 7030-7035, 2019 | 19 | 2019 |
| Nonimaging optics in luminescent solar concentration BD Markman, RR Ranade, NC Giebink Optics Express 20 (105), A622-A629, 2012 | 17 | 2012 |
| Selective and confined epitaxial growth development for novel nano-scale electronic and photonic device structures ST Šuran Brunelli, B Markman, A Goswami, HY Tseng, S Choi, ... Journal of Applied Physics 126 (1), 015703, 2019 | 16 | 2019 |
| Vector vortex beam emission from organic semiconductor microlasers H Qian, BD Markman, NC Giebink Applied Physics Letters 103 (16), 161110, 2013 | 10 | 2013 |
| Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth A Goswami, STŠ Brunelli, B Markman, AA Taylor, HY Tseng, K Mukherjee, ... Physical Review Materials 4 (12), 123403, 2020 | 9 | 2020 |
| In₀.₅₃Ga₀.₄₇As/InAs Composite Channel MOS-HEMT Exhibiting 511 GHz fτ and 256 GHz fmax B Markman, STŠ Brunelli, A Goswami, M Guidry, MJW Rodwell IEEE Journal of the Electron Devices Society 8, 930-934, 2020 | 9 | 2020 |
| Transistors for 100-300GHz Wireless M Rodwell, B Markman, Y Fang, L Whitaker, HY Tseng, ASH Ahmed ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 3 | 2021 |
| Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties A Goswami, B Markman, STŠ Brunelli, S Chatterjee, J Klamkin, ... Journal of Applied Physics 130 (8), 085302, 2021 | 3 | 2021 |
| Lg = 40nm Composite Channel MOS-HEMT Exhibiting fτ = 420 GHz, fmax = 562 GHz B Markman, STŠ Brunelli, M Guidry, L Whitaker, MJW Rodwell 2021 Device Research Conference (DRC), 1-2, 2021 | 2 | 2021 |
| Self-Aligned InGaAs Channel MOS-HEMTs for High Frequency Applications L Whitaker, B Markman, MJW Rodwell 2023 Device Research Conference (DRC), 1-2, 2023 | | 2023 |
| Effects of growth parameters on faceting and defects in confined epitaxial lateral overgrowth A Goswami, ST Šuran Brunelli, B Markman, D Pennachio, HY Tseng, ... Bulletin of the American Physical Society 65, 2020 | | 2020 |
| III-V In_ {x} Ga_1 {-x} As/InP MOS-HEMTs for 100-340GHz Communications Systems BD Markman UC Santa Barbara, 2020 | | 2020 |
| Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers JP Sculley, B Markman, U Soylu, Y Fang, ME Urteaga, AD Carter, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | | 2019 |
| First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors JP Sculley, Y Fang, B Markman, ME Urteaga, AD Carter, MJW Rodwell, ... 2019 Device Research Conference (DRC), 105-106, 2019 | | 2019 |
| Development of a High Power Density Millimeter-Wave InP HBT Technology M Urteaga, A Carter, Y Fang, B Markman, M Rodwell, J Sculley, D Yoder 1Teledyne Scientific Company Thousand Oaks United States, 2019 | | 2019 |
Mark J.W. RodwellProfessor of Electrical and Computer Engineering, University of California, Santa Barbara在 ece.ucsb.edu 的电子邮件经过验证
