受强制性开放获取政策约束的文章 - Nujhat Tasneem了解详情
无法在其他位置公开访问的文章：17 篇
Direct comparison of ferroelectric properties in Hf0. 5Zr0. 5O2 between thermal and plasma-enhanced atomic layer deposition
J Hur, N Tasneem, G Choe, P Wang, Z Wang, AI Khan, S Yu
Nanotechnology 31 (50), 505707, 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
The impacts of ferroelectric and interfacial layer thicknesses on ferroelectric FET design
N Tasneem, MM Islam, Z Wang, H Chen, J Hur, D Triyoso, S Consiglio, ...
IEEE Electron Device Letters 42 (8), 1156-1159, 2021
强制性开放获取政策： US Department of Defense
Standby bias improvement of read after write delay in ferroelectric field effect transistors
Z Wang, N Tasneem, J Hur, H Chen, S Yu, W Chern, A Khan
2021 IEEE International Electron Devices Meeting (IEDM), 19.3. 1-19.3. 4, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Trap capture and emission dynamics in ferroelectric field-effect transistors and their impact on device operation and reliability
N Tasneem, Z Wang, Z Zhao, N Upadhyay, S Lombardo, H Chen, J Hur, ...
2021 IEEE International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor
J Hur, P Wang, Z Wang, G Choe, N Tasneem, AI Khan, S Yu
2020 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2020
强制性开放获取政策： US Department of Defense
Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2
K Chae, SF Lombardo, N Tasneem, M Tian, H Kumarasubramanian, ...
ACS Applied Materials & Interfaces 14 (32), 36771-36780, 2022
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
A Ge-channel ferroelectric field effect transistor with logic-compatible write voltage
D Das, PV Ravindran, C Park, N Tasneem, Z Wang, H Chen, W Chern, ...
IEEE Electron Device Letters 44 (2), 257-260, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Efficiency of ferroelectric field-effect transistors: An experimental study
N Tasneem, MM Islam, Z Wang, Z Zhao, N Upadhyay, SF Lombardo, ...
IEEE Transactions on Electron Devices 69 (3), 1568-1574, 2022
强制性开放获取政策： US Department of Defense
Ferroelectric tunnel junction optimization by plasma-enhanced atomic layer deposition
J Hur, YC Luo, P Wang, N Tasneem, AI Khan, S Yu
2020 IEEE Silicon Nanoelectronics Workshop (SNW), 11-12, 2020
强制性开放获取政策： US Department of Defense
Immediate read-after-write capability in p-type ferroelectric field-effect transistors and its evolution with fatigue cycling
N Tasneem, Z Wang, H Chen, S Yu, W Chern, A Khan
IEEE Transactions on Device and Materials Reliability 23 (1), 142-146, 2023
强制性开放获取政策： US Department of Defense
An empirical compact model for ferroelectric field-effect transistor calibrated to experimental data
Z Wang, N Tasneem, MM Islam, H Chen, J Hur, W Chern, S Yu, A Khan
IEEE Transactions on Electron Devices 69 (3), 1519-1523, 2022
强制性开放获取政策： US Department of Defense
Direct Quantitative Extraction of Internal Variables from Measured PUND Characteristics Providing New Key Insights into Physics and Performance of Silicon and Oxide Channel …
M Passlack, N Tasneem, Z Wang, KA Aabrar, J Hur, H Chen, VDH Hou, ...
2022 International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Improved Endurance with Electron-Only Switching in Ferroelectric Devices
Z Wang, N Tasneem, H Chen, S Yu, W Chern, A Khan
2022 Device Research Conference (DRC), 1-2, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Investigating dynamic minor loop of ferroelectric capacitor
P Wang, Z Wang, N Tasneem, J Hur, AI Khan, S Yu
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2019
强制性开放获取政策： US Department of Defense
Standby Bias Improves the Endurance in Ferroelectric Field Effect Transistors due to Fast Neutralization of Interface Traps
Z Wang, N Tasneem, J Hur, H Chen, S Yu, W Chern, A Khan
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
The Effect of Annealing Temperature on Antiferroelectric Zirconia
AA Gaskell, Z Wang, M Dopita, D Kriegner, N Tasneem, AI Khan
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
强制性开放获取政策： US Department of Defense
Interfacial Oxide Layer Scavenging in Ferroelectric HfZrO-Based MOS Structures With Ge Channel for Reduced Write Voltages
C Park, H Kashyap, D Das, J Hur, N Tasneem, S Lombardo, N Afroze, ...
IEEE Transactions on Electron Devices, 2023
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：10 篇
Antiferroelectric negative capacitance from a structural phase transition in zirconia
M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ...
Nature communications 13 (1), 1228, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Ferroelectric hafnium zirconium oxide compatible with back-end-of-line process
J Hur, YC Luo, N Tasneem, AI Khan, S Yu
IEEE Transactions on Electron Devices 68 (7), 3176-3180, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
Z Wang, AA Gaskell, M Dopita, D Kriegner, N Tasneem, J Mack, ...
Applied Physics Letters 112 (22), 2018
强制性开放获取政策： US National Science Foundation
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