| Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof M Titus, Z Cui, S Kanakamedala, YS Lee, C Lee US Patent App. 15/593,820, 2018 | 346 | 2018 |
| Cobalt-containing conductive layers for control gate electrodes in a memory structure RS Makala, R Sharangpani, K Sateesh, G Mizuno, N Takeguchi, ... US Patent 10,128,261, 2018 | 137 | 2018 |
| Floating gate ultrahigh density vertical NAND flash memory RS Makala, Y Zhang, YS Lee, SK Kanakamedala, R Sharangpani, ... US Patent 9,159,739, 2015 | 93 | 2015 |
| Three-dimensional memory device containing vertically isolated charge storage regions and method of making thereof R Sharangpani, RS Makala, S Kanakamedala, F Zhou, S Peri, M Tsutsumi, ... US Patent 9,812,463, 2017 | 91 | 2017 |
| Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structure R Sharangpani, K Sateesh, RS Makala, S Peri, S Kanakamedala US Patent 9,659,955, 2017 | 71 | 2017 |
| Selective blocking dielectric formation in a three-dimensional memory structure RS Makala, R Sharangpani, SK Kanakamedala, X Liang, G Matamis, ... US Patent 9,484,357, 2016 | 63 | 2016 |
| Monolithic three dimensional NAND strings and methods of fabrication thereof RS Makala, Y Zhang, R Sharangpani, YS Lee, SK Kanakamedala, ... US Patent 9,691,884, 2017 | 61 | 2017 |
| Three-dimensional memory device with metal and silicide control gates S Kanakamedala, RS Makala, Y Zhang, YS Lee, G Matamis US Patent 9,627,399, 2017 | 59 | 2017 |
| Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof RS Makala, SK Kanakamedala, Y Zhang, YS Lee US Patent 10,438,964, 2019 | 52 | 2019 |
| Three-dimensional memory device having drain select level isolation structure and method of making thereof Y Zhang, J Alsmeier, RS Makala, S Kanakamedala, R Sharangpani, J Kai US Patent 10,050,054, 2018 | 50 | 2018 |
| A simple polymer based electrochemical transistor for micromolar glucose sensing SK Kanakamedala, HT Alshakhouri, M Agarwal, MA DeCoster Sensors and Actuators B: Chemical 157 (1), 92-97, 2011 | 46 | 2011 |
| Three-dimensional memory device including contact via structures that extend through word lines and method of making the same F Zhou, RS Makala, H Kinoshita, Y Zhang, J Kai, J Alsmeier, S Ross, ... US Patent 10,622,369, 2020 | 45 | 2020 |
| Three-dimensional memory device containing a lateral source contact and method of making the same S Kanakamedala, RS Makala, Y Zhang, R Sharangpani, J Kai, YS Lee US Patent 9,824,966, 2017 | 45 | 2017 |
| Three-dimensional memory device with semicircular metal-semiconductor alloy floating gate electrodes and methods of making thereof S Kanakamedala, RS Makala, R Sharangpani, S Peri, YS Lee, J Kai US Patent 10,622,368, 2020 | 42 | 2020 |
| Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same R Sharangpani, RS Makala, F Zhou, A Rajashekhar, SK Kanakamedala, ... US Patent 10,529,620, 2020 | 42 | 2020 |
| Cobalt-containing conductive layers for control gate electrodes in a memory structure S Peri, R Sharangpani, RS Makala, S Kanakamedala, K Shukla US Patent 9,984,963, 2018 | 40 | 2018 |
| Semiconductor structure with concave blocking dielectric sidewall and method of making thereof by isotropically etching the blocking dielectric layer K Sateesh, S Kanakamedala, RS Makala, R Sharangpani, Y Zhang, ... US Patent 9,478,558, 2016 | 35 | 2016 |
| Methods of making three dimensional NAND devices SK Kanakamedala, Y Zhang, RS Makala, YS Lee, J Alsmeier, G Matamis US Patent 9,305,932, 2016 | 34 | 2016 |
| Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof S Kanakamedala, RS Makala, YS Lee US Patent 10,256,247, 2019 | 31 | 2019 |
| Metal word lines for three dimensional memory devices R Sharangpani, RS Makala, SK Kanakamedala, K Sateesh, YS Lee, ... US Patent 9,570,455, 2017 | 31 | 2017 |
Sateesh KokaSemiconductor Memory在 fairchildsemi.com 的电子邮件经过验证
Sateesh KokaSemiconductor Memory在 fairchildsemi.com 的电子邮件经过验证
Mark A. DeCosterProfessor of Biomedical Engineering, Louisiana Tech University在 latech.edu 的电子邮件经过验证