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Umida Asatova (https://orcid.org/0000-0002-5256-8760)
Umida Asatova (https://orcid.org/0000-0002-5256-8760)
Urgench state university
在 urdu.uz 的电子邮件经过验证
标题
引用次数
引用次数
年份
Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy
AS Saidov, MS Saidov, SN Usmonov, UP Asatova
Semiconductors 44, 938-945, 2010
162010
Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties
AS Saidov, SN Usmonov, UP Asatova
Semiconductors 46, 1088-1095, 2012
92012
Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures
AS Saidov, SN Usmonov, UP Asatova
Applied Solar Energy 46, 104-106, 2010
32010
Features of Liquid–Phase Epitaxy of (InSb)1–z(Sn2)z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates
S Usmonov, U Asatova, A Akhmedov
2022 International Conference on Information Science and Communications …, 2022
12022
Semiconductor solid solutions Ge1-x Snx as a new material for electronics
AS Saidov, SK Ismailov, UP Asatova
2021 International Conference on Information Science and Communications …, 2021
12021
Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures
AS Saidov, AY Leiderman, SN Usmonov, UP Asatova
Technical Physics Letters 46, 1124-1127, 2020
12020
Growing and Studying The Photoelectric and Electrical Properties of Epitaxial Films of Ge1-X Snx Solid Solutions
A Saidov, SN Usmonov, U Asatova, SK Ismailov
Acta of Turin Polytechnic University in Tashkent 9 (1), 93-100, 2019
12019
Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)1-x-y(Ge2)x(ZnSe)y
S Ismailov, D Saparov, A Saidov, U Asatova, S Usmonov
2024 IEEE 25th International Conference of Young Professionals in Electron …, 2024
2024
FEATURES OF EPITAXY OF THE LAYERS OF SOLID SOLUTIONS (InSb) 1-x (Sn2) x ON GaAs SUBSTRATES
A Saidov, S Usmonov, U Asatova
Euroasian Journal of Semiconductors Science and Engineering 2 (6), 8, 2020
2020
FEATURES OF THE CURRENT-VOLTAGE CHARACTERISTIC OF n-GaP-p-(InSb) 1-x (Sn2) x HETEROSTRUCTURE
AS Saidov, AY Leyderman, SN Usmonov, UP Asatova
Euroasian Journal of Semiconductors Science and Engineering 1 (5), 2, 2019
2019
Thermoelectric properties of nGe-p (InSb){sub 1-x}(Sn {sub 2}) x heterostructures; Termoehlektricheskie svojstva nGe-p (InSb){sub 1-x}(Sn {sub 2}) x geterostruktur
AS Saidov, SN Usmonov, UP Asatova
Geliotekhnika, 2010
2010
Growing of the (Sn {sub 2}){sub 1-x}(InSb){sub x} epitaxial layers on the GaAs substrate from a liquid phase
AS Saidov, UP Asatova, SK Ismailov
2007
Growing of the (Sn2)1-x(InSb)x epitaxial layers on the GaAs substrate from a liquid phase
AS Saidov, UP Asatova, SK Ismailov
2007
Liquid phase epitaxy of solid solutions
AS Saidov, SK Ismailov, UP Asatova
2007
Electrical and photoelectrical properties of thin films on base nGaAs -p(Sn)1-x(InSb)x structures
AS Saidov, AY Leyderman, HH Ismoilov, U Asatova
2007
Current characteristics of GaAs-(Sn {sub 2}){sub x}(InSb){sub 1-x} heterostructure; Tokovye kharakteristiki GaAs-(Sn {sub 2}){sub x}(InSb){sub 1-x}-geterostruktur
AS Saidov, EA Koshchanov, AS Razzakov, UP Asatova
2003
The influence of gamma-radiation on current characteristics of silicon diodes; Kremnijli tugrilovci diod ustunchalari tok khrakteristiklariga gamma-kvantlarni tasiri
G Aripov, S Atamuratov, U Asatova
1997
The influence of gamma-radiation on current characteristics of silicon diodes
G Aripov, S Atamuratov, U Asatova
1997
The influence of Co {sup 60} quanta on current characteristics of rectifier columns on the base of silicon; Vliyaniya kvantov Co {sup 60} na tokovye kharakteristiki …
G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva
1995
The influence of Co60 quanta on current characteristics of rectifier columns on the base of silicon
G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva
1995
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