Joachim Burghartz 个人学术档案

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引用	13487	3117
h 指数	59	28
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B RejaeiSharif University of Technology在 sharif.ir 的电子邮件经过验证
K. A. JenkinsResearch Staff Member, IBM T.J. Watson Research Center在 us.ibm.com 的电子邮件经过验证
Marian Bartekassistant professor, Delft University of Technology 在 tudelft.nl 的电子邮件经过验证
P.M. (Lina) SarroDelft University of Technology, The Netherlands在 tudelft.nl 的电子邮件经过验证
yan zhuangwright state university在 wright.edu 的电子邮件经过验证
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia Tech在 ece.gatech.edu 的电子邮件经过验证
Lis Nanver在 utwente.nl 的电子邮件经过验证
J. H. CorreiaFull Professor of Electronics, University of Minho在 dei.uminho.pt 的电子邮件经过验证
Marco SpiritoDelft University of Technology在 tudelft.nl 的电子邮件经过验证
Klaus KernMax-Planck-Institute for Solid State Research and Ecole Polytechnique Fédérale de Lausanne在 fkf.mpg.de 的电子邮件经过验证
Slobodan MijalkovicSilvaco Inc., Circuit Simulation Department在 silvaco.com 的电子邮件经过验证
J.-O. PlouchartIBM Thomas J Watson Research Center: Yorktown Heights, NY, United States在 us.ibm.com 的电子邮件经过验证
Wissem Sfar ZaouiSenior Project Manager, AP Sensing GmbH在 apsensing.com 的电子邮件经过验证
Rik JosProfessor i mikroelektronik, Chalmers universitet在 chalmers.se 的电子邮件经过验证
Takao SomeyaProfessor, Department of Electric and Electronic Engineering, The University of Tokyo在 ee.t.u-tokyo.ac.jp 的电子邮件经过验证
Boris MurmannUniversity of Hawaii在 hawaii.edu 的电子邮件经过验证
Markus B. SchubertUniversity of Stuttgart, Institute for Photovoltaics在 ipv.uni-stuttgart.de 的电子邮件经过验证
sebastien fregoneseCR CNRS, Université de Bordeaux在 ims-bordeaux.fr 的电子邮件经过验证
Shan X. WangStanford University在 stanford.edu 的电子邮件经过验证
Lawrence LarsonProfessor of Engineering在 brown.edu 的电子邮件经过验证

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Joachim Burghartz

IMS CHIPS

在 ims-chips.de 的电子邮件经过验证 - 首页

microelectronics MST nanostructuring flexible electronics GaN technology


标题按引用次数排序按年份排序按标题排序	引用次数引用次数	年份
75-GHz f/sub T/SiGe-base heterojunction bipolar transistors GL Patton, JH Comfort, BS Meyerson, EF Crabbe, GJ Scilla, E De Fresart, ... IEEE Electron Device Letters 11 (4), 171-173, 1990	518	1990
Method for making three dimensional circuit integration CT Black, JN Burghartz, S Tiwari, JJ Welser US Patent 5,998,292, 1999	505	1999
On the design of RF spiral inductors on silicon JN Burghartz, B Rejaei IEEE transactions on electron devices 50 (3), 718-729, 2003	449	2003
RF circuit design aspects of spiral inductors on silicon JN Burghartz, DC Edelstein, M Soyuer, HA Ainspan, KA Jenkins IEEE Journal of Solid-State Circuits 33 (12), 2028-2034, 1998	373	1998
Microwave inductors and capacitors in standard multilevel interconnect silicon technology JN Burghartz, M Soyuer, KA Jenkins IEEE Transactions on Microwave Theory and Techniques 44 (1), 100-104, 1996	314	1996
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018	298	2018
SiGe thin film or SOI MOSFET and method for making the same JN Burghartz, BS Meyerson, YC Sun US Patent 5,461,250, 1995	292	1995
Bridging the gap between optical fibers and silicon photonic integrated circuits WS Zaoui, A Kunze, W Vogel, M Berroth, J Butschke, F Letzkus, ... Optics express 22 (2), 1277-1286, 2014	273	2014
Contact resistance and megahertz operation of aggressively scaled organic transistors F Ante, D Kälblein, T Zaki, U Zschieschang, K Takimiya, M Ikeda, ... small 8 (1), 73-79, 2012	262	2012
Integrated circuit inductor JN Burghartz, DC Edelstein, CV Jahnes, CE Uzoh US Patent 5,884,990, 1999	217	1999
Substrate effects in monolithic RF transformers on silicon KT Ng, B Rejaei, JN Burghartz IEEE Transactions on Microwave Theory and Techniques 50 (1), 377-383, 2002	213	2002
IEEE Electron Device Lett GL Patton, JH Comfort, BS Meyerson, EF Crabbe, GJ Scilla, E De Fresart, ... EDL-11 171 (1109), 55.61782, 1990	213	1990
Multilevel-spiral inductors using VLSI interconnect technology JN Burghartz, KA Jenkins, M Soyuer IEEE Electron device letters 17 (9), 428-430, 1996	211	1996
Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates JN Burghartz, DC Edelstein, KA Jenkiin, YH Kwark IEEE Transactions on Microwave Theory and Techniques 45 (10), 1961-1968, 1997	203	1997
Integrated circuit toroidal inductor JN Burghartz, DC Edelstein, CV Jahnes, CE Uzoh US Patent 5,793,272, 1998	201	1998
Surface-passivated high-resistivity silicon substrates for RFICs B Rong, JN Burghartz, LK Nanver, B Rejaei, M Van der Zwan IEEE Electron Device Letters 25 (4), 176-178, 2004	200	2004
Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors JW Borchert, B Peng, F Letzkus, JN Burghartz, PKL Chan, K Zojer, ... Nature communications 10 (1), 1119, 2019	199	2019
Integrated circuit spiral inductor JN Burghartz, DC Edelstein, CV Jahnes, CE Uzoh US Patent 6,114,937, 2000	171	2000
Ultra-thin chip technology and applications J Burghartz Springer Science & Business Media, 2010	168	2010
Spray coating of photoresist for pattern transfer on high topography surfaces NP Pham, JN Burghartz, PM Sarro Journal of Micromechanics and Microengineering 15 (4), 691, 2005	161	2005

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