| Жидкостная эпитаксия компенсированных слоев Арсенида Галлия и твердых растворов на его основе AS Saidov, MS Saidov, ÈA Koščanov, VM Tučkevič Издательство" Фан" Узбекской ССР, 1986 | 38 | 1986 |
| Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x(0 ≤ x ≤ 1) Solid Solution, Grown on Si … AS Saidov, DV Saparov, SN Usmonov, A Kutlimratov, JM Abdiev, ... Advances in Condensed Matter Physics 2021 (1), 3472487, 2021 | 26* | 2021 |
| The thermovoltaic effect in variband solid solution Si1–x Ge x (0 ≤ x ≤ 1) AS Saidov, AY Leyderman, AB Karshiev Technical Physics Letters 42, 725-728, 2016 | 22 | 2016 |
| About Possibility of Development Synergetic Processes in Semiconductors of Type A^ sup III^ B^ sup V^ A Leyderman, A Saidov, M Khashaev, U Rahmonov Journal of Materials science research 2 (2), 14, 2013 | 22 | 2013 |
| Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films SZ Zaynabidinov, AS Saidov, AY Leiderman, MU Kalanov, SN Usmonov, ... Semiconductors 50, 59-65, 2016 | 17 | 2016 |
| INFLUENCE OF WEAK GRADED GAP ON INJECTION DIFFUSION REGIMES OF CURRENT TRANSPORT IN SEMICONDUCTOR PN-STRUCTURES A LEYDERMAN, AS Saidov, S USMONOV, JM Abdiyev, QT Suyarov Congress Dates, 40, 2021 | 16 | 2021 |
| Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy AS Saidov, MS Saidov, SN Usmonov, UP Asatova Semiconductors 44, 938-945, 2010 | 16 | 2010 |
| Injection diffusion processes in the weak linear graded-band semiconductor pn-structures AY Leiderman, AS Saidov, JM Abdiyev Euroasian Journal of Semiconductors Science and Engineering 3 (1), 3, 2021 | 15 | 2021 |
| Thermovoltaic properties of technical silicon melted by solar radiation AS Saidov, AA Abakumov, MS Saidov, SN Usmonov, KT Kholikov Applied Solar Energy 43, 266-267, 2007 | 15 | 2007 |
| Structure and photoelectric properties of Si1 − x Sn x epilayers AS Saidov, SN Usmonov, M Kalanov, KM Madaminov Technical physics letters 36, 827-829, 2010 | 14 | 2010 |
| Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals AS Saidov, SN Usmonov, DV Saparov Advances in Materials Science and Engineering 2019 (1), 3932195, 2019 | 13 | 2019 |
| Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties AS Saidov, MS Saidov, SN Usmonov, AY Leiderman, MU Kalanov, ... Physics of the Solid State 53, 2012-2021, 2011 | 13 | 2011 |
| I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x AS Saidov, AY Leyderman, SN Usmonov, KT Kholikov Semiconductors 43, 416-418, 2009 | 13 | 2009 |
| Liquid-phase epitaxy of the (Si 2) 1− x− y (Ge 2) x (GaAs) y substitutional solid solution (0≤ x≤ 0.91, 0≤ y≤ 0.94) and their electrophysical properties AS Saidov, SN Usmonov, MS Saidov Semiconductors 49, 547-550, 2015 | 11 | 2015 |
| Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04) AS Saidov, SN Usmonov, MU Kalanov, AN Kurmantayev, AN Bahtybayev Physics of the Solid State 55, 45-53, 2013 | 10 | 2013 |
| Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy SN Usmonov, AS Saidov, AY Leyderman, D Saparov, KT Kholikov Semiconductors 43, 1092-1097, 2009 | 10 | 2009 |
| Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions AS Saidov, SN Usmonov, KT Kholikov, D Saparov Technical Physics Letters 33, 853-855, 2007 | 10 | 2007 |
| Razzakov AS Saidov, ÉA Koshchanov, A Sh Pis’ ma Zh. Tekh. Fiz 24 (2), 12, 1998 | 10 | 1998 |
| Influence of the varizonal Si1-xGex solid solution composition on the thermovoltaic effect in n–Si–p–Si (1-x) Gex structure AS Saidov, SN Usmonov, AB Karshiev, JM Abdiev IOP Conference Series: Earth and Environmental Science 1112 (1), 012040, 2022 | 9 | 2022 |
| Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties AS Saidov, SN Usmonov, UP Asatova Semiconductors 46, 1088-1095, 2012 | 9 | 2012 |
