受强制性开放获取政策约束的文章 - Andrew H. Jones了解详情
无法在其他位置公开访问的文章：1 篇
Staircase Avalanche Photodiode with a Mid-wave Infrared Absorber
AA Dadey, AH Jones, SD March, SR Bank, JC Campbell
2023 IEEE Photonics Conference (IPC), 1-2, 2023
强制性开放获取政策： US Department of Defense
可在其他位置公开访问的文章：34 篇
Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-μm applications
AH Jones, SD March, SR Bank, JC Campbell
Nature Photonics 14 (9), 559-563, 2020
强制性开放获取政策： US National Science Foundation, US Department of Defense
Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications
D Chen, SD March, AH Jones, Y Shen, AA Dadey, K Sun, JA McArthur, ...
Nature Photonics 17, 594–600, 2023
强制性开放获取政策： US Department of Defense
Multistep staircase avalanche photodiodes with extremely low noise and deterministic amplification
SD March, AH Jones, JC Campbell, SR Bank
Nature Photonics 15 (6), 468-474, 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Toward deterministic construction of low noise avalanche photodetector materials
AK Rockwell, M Ren, M Woodson, AH Jones, SD March, Y Tan, Y Yuan, ...
Applied Physics Letters 113 (10), 2018
强制性开放获取政策： US Department of Defense
AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence
AH Jones, Y Yuan, M Ren, SJ Maddox, SR Bank, JC Campbell
Optics Express 25 (20), 24340-24345, 2017
强制性开放获取政策： US Department of Defense
Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition
J Zheng, AH Jones, Y Tan, AK Rockwell, S March, SZ Ahmed, CA Dukes, ...
Applied Physics Letters 115 (12), 2019
强制性开放获取政策： US Department of Defense
High Gain, Low Dark Current Al0.8In0.2As0.23Sb0.77 Avalanche Photodiodes
AH Jones, AK Rockwell, SD March, Y Yuan, SR Bank, JC Campbell
IEEE Photonics Technology Letters 31 (24), 1948-1951, 2019
强制性开放获取政策： US Department of Defense
III-V on silicon avalanche photodiodes by heteroepitaxy
Y Yuan, D Jung, K Sun, J Zheng, AH Jones, JE Bowers, JC Campbell
Optics letters 44 (14), 3538-3541, 2019
强制性开放获取政策： US Department of Defense
Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range
B Guo, X Jin, S Lee, SZ Ahmed, AH Jones, X Xue, B Liang, HIJ Lewis, ...
Journal of Lightwave Technology 40 (14), 4758-4764, 2022
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Comparison of Different Period Digital Alloy AlInAsSb Avalanche Photodiodes
Y Yuan, AK Rockwell, Y Peng, J Zheng, SD March, AH Jones, M Ren, ...
Journal of Lightwave Technology 37 (14), 3647-3654, 2019
强制性开放获取政策： US Department of Defense
Efficient absorption enhancement approaches for AlInAsSb avalanche photodiodes for 2-μm applications
D Chen, K Sun, AH Jones, JC Campbell
Optics Express 28 (17), 24379-24388, 2020
强制性开放获取政策： US Department of Defense
Near ultraviolet enhanced 4H-SiC Schottky diode
Y Shen, AH Jones, Y Yuan, J Zheng, Y Peng, B VanMil, K Olver, ...
Applied Physics Letters 115 (26), 2019
强制性开放获取政策： US Department of Defense
Al 0.8 In 0.2 As 0.23 Sb 0.77 Avalanche Photodiodes
AK Rockwell, Y Yuan, AH Jones, SD March, SR Bank, JC Campbell
IEEE Photonics Technology Letters 30 (11), 1048 - 1051, 2018
强制性开放获取政策： US Department of Defense
Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes
B Guo, SZ Ahmed, X Xue, AK Rockwell, J Ha, S Lee, B Liang, AH Jones, ...
Journal of Lightwave Technology 40 (17), 5934-5942, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense
Full band Monte Carlo simulation of AlInAsSb digital alloys
J Zheng, SZ Ahmed, Y Yuan, A Jones, Y Tan, AK Rockwell, SD March, ...
InfoMat 2 (6), 1236-1240, 2020
强制性开放获取政策： US Department of Defense
AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes for Mid-Infrared Detection
AH Jones, SD March, AA Dadey, AJ Muhowski, SR Bank, JC Campbell
IEEE Journal of Quantum Electronics 58 (4), 1-6, 2022
强制性开放获取政策： US Department of Defense
Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system
D Chen, R Wang, J Andrew McArthur, X Xue, AH Jones, SR Bank, ...
Applied Physics Letters 119 (3), 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense
Determination of background doping polarity of unintentionally doped semiconductor layers
DR Fink, S Lee, SH Kodati, V Rogers, TJ Ronningen, M Winslow, ...
Applied Physics Letters 116 (7), 2020
强制性开放获取政策： US Department of Energy
Near 100% external quantum efficiency 1550-nm broad spectrum photodetector
Y Shen, X Xue, AH Jones, Y Peng, J Gao, TC Tzu, M Konkol, ...
Optics Express 30 (2), 3047-3054, 2022
强制性开放获取政策： US National Science Foundation
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