| Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes SH Jin, SN Dunham, J Song, X Xie, J Kim, C Lu, A Islam, F Du, J Kim, ... Nature nanotechnology 8 (5), 347-355, 2013 | 221 | 2013 |
| Direct Observation of Self-heating in III-V Gate-All-Around Nanowire MOSFETs SH Shin, MA Wahab, M Masuduzzaman, K Maize, J Gu, M Si, A Shakouri, ... Electron Devices, IEEE Transactions on 62 (11), 3516-3523, 2015 | 85 | 2015 |
| Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs SH Shin, M Masuduzzaman, MA Wahab, K Maize, J Gu, M Si, A Shakouri, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 20.3.1 - 20.3.4, 2014 | 85 | 2014 |
| Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes X Xie*, SH Jin*, MA Wahab*, AE Islam, C Zhang, F Du, E Seabron, T Lu, ... Nature Communications (*equal contribution) 5, 5332, 2014 | 55 | 2014 |
| Electroluminescence in Aligned Arrays of Single-Wall Carbon Nanotubes with Asymmetric Contacts X Xie*, AE Islam*, MA Wahab*, Y Lina, X Ho, MA Alam, JA Rogers ACS nano (*equal contribution) 6 (9), 7981-7988, 2012 | 50 | 2012 |
| Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20nm modern integrated circuits W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab, MA Alam Microelectronics Reliability 81, 262-273, 2018 | 41 | 2018 |
| 3D Modeling of Spatio-temporal Heat-transport in III-V Gate-all-around Transistors Allows Accurate Estimation and Optimization of Nanowire Temperature MA Wahab, SH Shin, MA Alam Electron Devices, IEEE Transactions on 62 (11), 3595-3604, 2015 | 41 | 2015 |
| Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs SH Shin, M Masuduzzaman, JJ Gu, MA Wahab, N Conrad, M Si, PD Ye, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 7.5.1-7.5.4, 2013 | 38 | 2013 |
| Origin and Implications of Hot Carrier Degradation of Gate-all-around nanowire III-V MOSFETs SH Shin, MA Wahab, M Masuduzzaman, M Si, J Gu, PD Ye, MA Alam Reliability Physics Symposium, 2014 IEEE International, 4A.3.1 - 4A.3.6, 2014 | 23 | 2014 |
| Electrostatic Dimension of Aligned Array Carbon Nanotube Field Effect Transistors MA Wahab, SH Jin, AE Islam, J Kim, J Kim, WH Yeo, DJ Lee, HU Chung, ... ACS nano 7 (2), 1299-1308, 2013 | 20 | 2013 |
| Direct current injection and thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes X Xie, MA Wahab, Y Li, AE Islam, B Tomic, J Huang, B Burns, E Seabron, ... Journal of Applied Physics 117 (13), 134303, 2015 | 16 | 2015 |
| Spatio-Temporal Mapping of Device Temperature due to Self-Heating in Sub-22 nm Transistors MA Wahab, SH Shin, MA Alam Reliability Physics Symposium, 2016 IEEE International, XT.5.1-XT.5.6, 2016 | 13 | 2016 |
| Fundamental trade-off between Short-Channel Control and Hot Carrier Degradation in an Extremely-thin Silicon-on-Insulator (ETSOI) Technology SH Shin, MA Wahab, W Ahn, A Ziabari, K Maize, A Shakouri, MA Alam Electron Devices Meeting (IEDM), 2015 IEEE International, 20.3.1-20.3.4, 2015 | 12 | 2015 |
| A Verilog-A Compact Model for Negative Capacitance FET MA Wahab, MA Alam NEEDS NanoHUB, 2015 | 10 | 2015 |
| Implications of Electrical Crosstalk for High Density Aligned Array of Single-Wall Carbon Nanotubes MA Wahab, MA Alam Electron Devices, IEEE Transactions on 61 (12), 4273 - 4281, 2014 | 10 | 2014 |
| Least-squares optimal variable step-size LMS for nonblind system identification with noise MA Wahab, MA Uzzaman, MS Hai, MA Haque, MK Hasan 2008 International Conference on Electrical and Computer Engineering, 428-433, 2008 | 10 | 2008 |
| Physics-based compact models for insulated-gate field-effect biosensors, landau-transistors, and thin-film solar cells MA Alam, P Dak, MA Wahab, X Sun Custom Integrated Circuits Conference (CICC), 2015 IEEE (Invited), 1-8, 2015 | 8 | 2015 |
| Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied MA Wahab, K Alam Nano-Micro Letters 2 (2), 126-133, 2010 | 7 | 2010 |
| MATLAB: Negative Capacitance (NC) FET Model MA Wahab, MA Alam NEEDS NanoHUB, 2015 | 6 | 2015 |
| Compact Model of Short-Channel Negative Capacitance (NC)- FET with BSIM4/MVS and Landau Theory MA Wahab, MA Alam NEEDS Annual Meeting and Workshop, 2015 | 4 | 2015 |
Muhammad Ashraful AlamJai N. Gupta Professor of Electrical Engineering, Purdue University在 purdue.edu 的电子邮件经过验证
