Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate A Ott, S King, A Sharma US Patent 8,120,114, 2012 | 416 | 2012 |
Cleaning of AlN and GaN surfaces SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ... Journal of applied physics 84 (9), 5248-5260, 1998 | 407 | 1998 |
Adhesion and electromigration performance at an interface between a dielectric and metal S King, J Klaus US Patent 8,178,436, 2012 | 401 | 2012 |
Selective deposition of amorphous silicon films on metal gates J Klaus, S King, W Rachmady US Patent 7,816,218, 2010 | 214 | 2010 |
Plasma enhanced atomic layer deposition of SiNx: H and SiO2 SW King Journal of Vacuum Science & Technology A 29 (4), 2011 | 211 | 2011 |
Cleaning of GaN surfaces LL Smith, SW King, RJ Nemanich, RF Davis Journal of electronic materials 25 (5), 805-810, 1996 | 195 | 1996 |
Dielectric barrier, etch stop, and metal capping materials for state of the art and beyond metal interconnects SW King ECS Journal of Solid State Science and Technology 4 (1), N3029, 2014 | 182 | 2014 |
UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC MC Benjamin, MD Bremser, TW Weeks Jr, SW King, RF Davis, ... Applied Surface Science 104, 455-460, 1996 | 149 | 1996 |
Negative electron affinity surfaces of aluminum nitride and diamond RJ Nemanich, PK Baumann, MC Benjamin, ... Diamond Relat. Mater 5 (6), 790-796, 1996 | 135 | 1996 |
Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC: H thin films SW King, M French, J Bielefeld, WA Lanford Journal of Non-Crystalline Solids 357 (15), 2970-2983, 2011 | 118 | 2011 |
Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on … EA Scott, JT Gaskins, SW King, PE Hopkins APL Materials 6 (5), 058302, 2018 | 113 | 2018 |
Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Beryllium Oxide, Aluminum … JT Gaskins, PE Hopkins, DR Merrill, SR Bauers, E Hadland, DC Johnson, ... ECS Journal of Solid State Science and Technology 6 (10), N189-N208, 2017 | 110 | 2017 |
Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes N Alimardani, SW King, BL French, C Tan, BP Lampert, JF Conley Journal of Applied Physics 116 (2), 2014 | 100 | 2014 |
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction SW King, C Ronning, RF Davis, MC Benjamin, RJ Nemanich Journal of applied physics 84 (4), 2086-2090, 1998 | 95 | 1998 |
Influence of network bond percolation on the thermal, mechanical, electrical and optical properties of high and low-k a-SiC: H thin films SW King, J Bielefeld, G Xu, WA Lanford, Y Matsuda, RH Dauskardt, N Kim, ... Journal of Non-Crystalline Solids 379, 67-79, 2013 | 86 | 2013 |
Research Updates: The three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies SW King, H Simka, D Herr, H Akinaga, M Garner APL Materials 1 (4), 040701, 2013 | 82 | 2013 |
Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal AK Sharma, S King, D Hanken, AW Ott US Patent 7,790,631, 2010 | 78 | 2010 |
Intrinsic stress effect on fracture toughness of plasma enhanced chemical vapor deposited SiN x: H films S King, R Chu, G Xu, J Huening Thin Solid Films 518 (17), 4898-4907, 2010 | 78 | 2010 |
Film property requirements for hermetic low-k a-SiOxCyNz: H dielectric barriers SW King, D Jacob, D Vanleuven, B Colvin, J Kelly, M French, J Bielefeld, ... ECS Journal of Solid State Science and Technology 1 (6), N115, 2012 | 74 | 2012 |
Wet Chemical Processing of (0001) Si 6H‐SiC Hydrophobic and Hydrophilic Surfaces SW King, RJ Nemanich, RF Davisa Journal of the Electrochemical Society 146 (5), 1910-1917, 1999 | 72 | 1999 |