Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures D Donetsky, SP Svensson, LE Vorobjev, G Belenky Applied Physics Letters 95 (21), 2009 | 192 | 2009 |
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials D Donetsky, G Belenky, S Svensson, S Suchalkin Applied Physics Letters 97 (5), 2010 | 184 | 2010 |
A dual-color injection laser based on intra-and inter-band carrier transitions in semiconductor quantum wells or quantum dots A Kastalsky, LE Vorobjev, A Firsov, VL Zerova, E Towe IEEE journal of quantum electronics 37 (10), 1356-1362, 2001 | 43 | 2001 |
Toward far-and mid-IR intraband lasers based on hot carrier intervalley/real-space transfer in multiple quantum well systems VY Aleshkin, AA Andronov, AV Antonov, EV Demidov, AE Dubinov, ... Smart Optical Inorganic Structures and Devices 4318, 192-203, 2001 | 19 | 2001 |
Transport properties of holes in bulk InAsSb and performance of barrier long-wavelength infrared detectors Y Lin, D Wang, D Donetsky, G Kipshidze, L Shterengas, LE Vorobjev, ... Semiconductor Science and Technology 29 (11), 112002, 2014 | 16 | 2014 |
A Two-Dimensional hot electron electro-optic effect in GaAs/(Al, Ga) As multiple quantum wells E Towe, D Sun, LE Vorobjev, SN Danilov, DA Firsov, EA Zibik Superlattices and microstructures 17 (2), 129-133, 1995 | 12 | 1995 |
The effect of Auger recombination on the nonequilibrium carrier recombination rate in the InGaAsSb/AlGaAsSb quantum wells M Vinnichenko, I Makhov, R Balagula, D Firsov, L Vorobjev, L Shterengas, ... Superlattices and Microstructures 109, 743-749, 2017 | 6 | 2017 |
Hole spin-relaxation in quantum wells from saturation of inter-subband absorption J Kainz, P Schneider, SD Ganichev, U Rössler, W Wegscheider, D Weiss, ... Physica E: Low-dimensional Systems and Nanostructures 22 (1-3), 418-421, 2004 | 6 | 2004 |
Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells VY Aleshkin, DM Gaponova, DG Revin, LE Vorobjev, SN Danilov, ... 10th International Symposium on Nanostructures: Physics and Technology 5023 …, 2003 | 5 | 2003 |
Effect of Auger recombination on non-equilibrium charge carrier concentration in InGaAsSb/AlGaAsSb quantum wells MY Vinnichenko, IS Makhov, AV Selivanov, AM Sorokina, LE Vorobjev, ... St. Petersburg Polytechnical University Journal: Physics and Mathematics 2 …, 2016 | 2 | 2016 |
Characterization of silicon carbide epitaxial films by differential reflectance spectroscopy AV Shturbin, IE Titkov, VY Panevin, LE Vorobjev, RF Witman Third International Workshop on Nondestructive Testing and Computer …, 2000 | 2 | 2000 |
Impurity-assisted terahertz luminescence in quantum well nanostructures under interband photoexсitation IS Makhov, VY Panevin, MY Vinnichenko, AN Sofronov, DA Firsov, ... St. Petersburg Polytechnical University Journal: Physics and Mathematics 2 …, 2016 | 1 | 2016 |
16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto-and Nanoelectronics RA Suris, LE Vorobjev, DA Firsov Journal of Physics: Conference Series 586 (1), 011001, 2015 | 1 | 2015 |
Auger-recombination effect on the nonequilibrium charge carriers concentration in InGaAsSb/AlGaAsSb quantum wells. MY Vinnichenko, IS Makhov, AV Selivanov, AM Sorokina, LE Vorobjev, ... St. Petersburg State Polytechnical University Journal. Physics and Mathematics, 2016 | | 2016 |
Terahertz emission and reflection associated with surface plasmon polaritons in n-GaN microstructures GA Melentyev, VA Shalygin, MD Moldavskaya, VY Panevin, LE Vorobjev, ... 2014 39th International Conference on Infrared, Millimeter, and Terahertz …, 2014 | | 2014 |
Dynamics of charge carrier recombination and capture in laser nanostructures with InGaAsSb/AlGaAsSb quantum wells MY Vinnichenko, LE Vorobjev, DA Firsov, MO Mashko, AN Sofronov, ... The Physics of Semiconductors 1566 (1), 480-481, 2013 | | 2013 |
Intersubband emission and carrier dynamics in GaAs/AlGaAs tunnel‐coupled quantum wells after ultrafast optical pumping S Hanna, W Silz, VY Panevin, VA Shalygin, LE Vorobjev, DA Firsov, ... AIP Conference Proceedings 893 (1), 479-480, 2007 | | 2007 |
Stressed GaAsN/GaAs Heterostructures as a Base of THz Radiation Sources DA Firsov, LE Vorobjev, VA Shalygin, VY Panevin, AN Sofronov, DV Tsoy, ... Physics of Semiconductors 893, 509-510, 2007 | | 2007 |
Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing LE Vorobjev, DA Firsov, VA Shalygin, VN Tulupenko, YM Shernyakov, ... Fourth International Conference on Material Science and Material Properties …, 1999 | | 1999 |
Coherent Intersubband Excitations on a Picosecond Time Scale S Hanna, A Seilmeier, E Dupont, HC Liu, LE Vorobjev, V Yu, ... | | |