| Electrochemical metallization memories—fundamentals, applications, prospects I Valov, R Waser, JR Jameson, MN Kozicki Nanotechnology 22 (25), 254003, 2011 | 1208 | 2011 |
| Nanoscale memory elements based on solid-state electrolytes MN Kozicki, M Park, M Mitkova IEEE Transactions on Nanotechnology 4 (3), 331-338, 2005 | 668 | 2005 |
| Programmable metallization cell structure and method of making same MN Kozicki, WC West US Patent 5,761,115, 1998 | 609 | 1998 |
| Bipolar and Unipolar Resistive Switching in Cu-Doped C Schindler, SCP Thermadam, R Waser, MN Kozicki IEEE Transactions on Electron Devices 54 (10), 2762-2768, 2007 | 489 | 2007 |
| Programmable microelectronic devices and method of forming and programming same MN Kozicki US Patent 6,487,106, 2002 | 407 | 2002 |
| Silver incorporation in Ge–Se glasses used in programmable metallization cell devices M Mitkova, MN Kozicki Journal of non-crystalline solids 299, 1023-1027, 2002 | 393 | 2002 |
| Study of multilevel programming in programmable metallization cell (PMC) memory U Russo, D Kamalanathan, D Ielmini, AL Lacaita, MN Kozicki IEEE transactions on electron devices 56 (5), 1040-1047, 2009 | 377 | 2009 |
| Microelectronic programmable device and methods of forming and programming the same MN Kozicki, M Mitkova US Patent 6,635,914, 2003 | 355 | 2003 |
| Personal electronic dosimeter MN Kozicki US Patent 5,500,532, 1996 | 332 | 1996 |
| Programmable sub-surface aggregating metallization structure and method of making same MN Kozicki, WC West US Patent 6,418,049, 2002 | 324 | 2002 |
| Programmable metallization cell structure and method of making same MN Kozicki, WC West US Patent 5,896,312, 1999 | 317 | 1999 |
| Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same MN Kozicki US Patent 6,825,489, 2004 | 315 | 2004 |
| Programmable microelectronic device, structure, and system and method of forming the same MN Kozicki US Patent 6,985,378, 2006 | 304 | 2006 |
| A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte MN Kozicki, C Gopalan, M Balakrishnan, M Mitkova IEEE Transactions on Nanotechnology 5 (5), 535-544, 2006 | 286 | 2006 |
| High resolution, multi-layer resist for microlithography and method therefor MN Kozicki, SW Hsia US Patent 5,314,772, 1994 | 286 | 1994 |
| Programmable structure, an array including the structure, and methods of forming the same MN Kozicki US Patent 6,927,411, 2005 | 257 | 2005 |
| Self-repairing interconnections for electrical circuits MN Kozicki US Patent 6,388,324, 2002 | 255 | 2002 |
| Programmable sub-surface aggregating metallization structure and method of making same MN Kozicki, WC West US Patent 6,798,692, 2004 | 254 | 2004 |
| Programmable interconnection system for electrical circuits MN Kozicki US Patent 6,469,364, 2002 | 244 | 2002 |
| Low current resistive switching in Cu–SiO2 cells C Schindler, M Weides, MN Kozicki, R Waser Applied Physics Letters 92 (12), 2008 | 238 | 2008 |
