A comprehensive review on emerging artificial neuromorphic devices J Zhu, T Zhang, Y Yang, R Huang Applied Physics Reviews 7 (1), 2020 | 576 | 2020 |
Ion gated synaptic transistors based on 2D van der Waals crystals with tunable diffusive dynamics J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ... Advanced Materials 30 (21), 1800195, 2018 | 451 | 2018 |
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems Y Zhang, Z Wang, J Zhu, Y Yang, M Rao, W Song, Y Zhuo, X Zhang, ... Applied Physics Reviews 7 (1), 2020 | 291 | 2020 |
Dual-Gated MoS2 Neuristor for Neuromorphic Computing L Bao, J Zhu, Z Yu, R Jia, Q Cai, Z Wang, L Xu, Y Wu, Y Yang, Y Cai, ... ACS applied materials & interfaces 11 (44), 41482-41489, 2019 | 88 | 2019 |
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform J Zhu, JH Park, SA Vitale, W Ge, GS Jung, J Wang, M Mohamed, T Zhang, ... Nature Nanotechnology 18 (5), 456-463, 2023 | 81 | 2023 |
Designing artificial two-dimensional landscapes via atomic-layer substitution Y Guo, Y Lin, K Xie, B Yuan, J Zhu, PC Shen, AY Lu, C Su, E Shi, K Zhang, ... Proceedings of the National Academy of Sciences 118 (32), e2106124118, 2021 | 52 | 2021 |
Integrated biosensor platform based on graphene transistor arrays for real-time high-accuracy ion sensing M Xue, C Mackin, WH Weng, J Zhu, Y Luo, SXL Luo, AY Lu, M Hempel, ... Nature communications 13 (1), 5064, 2022 | 47 | 2022 |
Vertical WS2/SnS2 van der Waals Heterostructure for Tunneling Transistors J Wang, R Jia, Q Huang, C Pan, J Zhu, H Wang, C Chen, Y Zhang, ... Scientific reports 8 (1), 17755, 2018 | 44 | 2018 |
A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High Ratio Y Zhao, C Wu, Q Huang, C Chen, J Zhu, L Guo, R Jia, Z Lv, Y Yang, M Li, ... IEEE Electron Device Letters 38 (5), 540-543, 2017 | 42 | 2017 |
Stochastic neuron based on IGZO Schottky diodes for neuromorphic computing B Dang, K Liu, J Zhu, L Xu, T Zhang, C Cheng, H Wang, Y Yang, Y Hao, ... APL Materials 7 (7), 2019 | 39 | 2019 |
Design and Simulation of a Novel Graded-Channel Heterojunction Tunnel FET With High Ratio and Steep Swing J Zhu, Y Zhao, Q Huang, C Chen, C Wu, R Jia, R Huang IEEE Electron Device Letters 38 (9), 1200-1203, 2017 | 33 | 2017 |
Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts Y Guo‡, E Shi‡, J Zhu‡, PC Shen, J Wang, Y Lin, Y Mao, S Deng, B Li, ... Nature Nanotechnology, 1-7, 2022 | 32 | 2022 |
Physically transient true random number generators based on paired threshold switches enabling Monte Carlo method applications B Dang, J Sun, T Zhang, S Wang, M Zhao, K Liu, L Xu, J Zhu, C Cheng, ... IEEE Electron Device Letters 40 (7), 1096-1099, 2019 | 29 | 2019 |
Interfacial redox processes in memristive devices based on valence change and electrochemical metallization K Liu, L Qin, X Zhang, J Zhu, X Sun, K Yang, Y Cai, Y Yang, R Huang Faraday Discussions 213, 41-52, 2019 | 20 | 2019 |
Bipolar to unipolar mode transition and imitation of metaplasticity in oxide based memristors with enhanced ionic conductivity C Cheng, Y Li, T Zhang, Y Fang, J Zhu, K Liu, L Xu, Y Cai, X Yan, Y Yang, ... Journal of Applied Physics 124 (15), 2018 | 20 | 2018 |
New understanding of random telegraph noise amplitude in tunnel FETs C Chen, Q Huang, J Zhu, Y Zhao, L Guo, R Huang IEEE Transactions on Electron Devices 64 (8), 3324-3330, 2017 | 16 | 2017 |
Combinational access tunnel FET SRAM for ultra-low power applications L Yang, J Zhu, C Chen, Z Wang, Z Liu, Q Huang, L Ye, R Huang 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018 | 14 | 2018 |
Voltage-controlled magnetoresistance in silicon nanowire transistors Y Zhang, J Fan, Q Huang, J Zhu, Y Zhao, M Li, Y Wu, R Huang Scientific Reports 8 (1), 15194, 2018 | 8 | 2018 |
Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018) J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ... Advanced Materials 30 (21), 1870149, 2018 | 7 | 2018 |
2D materials for logic device scaling P Wu, T Zhang, J Zhu, T Palacios, J Kong Nature Materials 23 (1), 23-25, 2024 | 6 | 2024 |