| SixSnyGe1-xy and related alloy heterostructures based on Si, Ge and Sn J Kouvetakis, M Bauer, J Tolle US Patent 7,598,513, 2009 | 477 | 2009 |
| Hybrid Group IV/III-V Semiconductor Structures J Kouvetakis, J Menendez US Patent App. 13/062,304, 2011 | 467 | 2011 |
| GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon J Kouvetakis, M Bauer, J Menendez, CW Hu, IST Tsong, J Tolle US Patent 7,589,003, 2009 | 464 | 2009 |
| Method for preparing ge1-x-ysnxey (e= p, as, sb) semiconductors and related si-ge-sn-e and si-ge-e analogs J Kouvetakis, M Bauer, J Tolle, C Cook US Patent 7,238,596, 2007 | 456 | 2007 |
| Optical critical points of thin-film alloys: A comparative study VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ... Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006 | 436 | 2006 |
| Boron-carbon-nitrogen materials of graphite-like structure RB Kaner, J Kouvetakis, CE Warble, ML Sattler, N Bartlett Materials research bulletin 22 (3), 399-404, 1987 | 357 | 1987 |
| Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon J Kouvetakis, J Menendez, J Tolle, L Liao, D Samara-Rubio US Patent 7,582,891, 2009 | 342 | 2009 |
| Ge–Sn semiconductors for band-gap and lattice engineering M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ... Applied physics letters 81 (16), 2992-2994, 2002 | 331 | 2002 |
| Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon J Kouvetakis, J Menendez, AVG Chizmeshya Annu. Rev. Mater. Res. 36 (1), 497-554, 2006 | 326 | 2006 |
| Novel synthetic routes to carbon-nitrogen thin films J Kouvetakis, M Todd, B Wilkens, A Bandari, N Cave Chemistry of materials 6 (6), 811-814, 1994 | 298 | 1994 |
| Novel aspects of graphite intercalation by fluorine and fluorides and new B/C, C/N and B/C/N materials based on the graphite network J Kouvetakis, T Sasaki, C Shen, R Hagiwara, M Lerner, KM Krishnan, ... Synthetic metals 34 (1-3), 1-7, 1989 | 296 | 1989 |
| Type-I strained-layer heterostructures with a direct bandgap J Menendez, J Kouvetakis Applied physics letters 85 (7), 1175-1177, 2004 | 230 | 2004 |
| Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ... Applied physics letters 97 (22), 2010 | 227 | 2010 |
| Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis Applied physics letters 95 (13), 2009 | 224 | 2009 |
| A novel graphite-like material of composition BC 3, and nitrogen–carbon graphites J Kouvetakis, RB Kaner, ML Sattler, N Bartlett Journal of the Chemical Society, Chemical Communications, 1758-1759, 1986 | 182 | 1986 |
| Perfectly tetragonal, tensile-strained Ge on Ge1− ySny buffered Si (100) YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Applied physics letters 90 (6), 2007 | 156 | 2007 |
| Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez Physical Review Letters 102 (10), 107403, 2009 | 154 | 2009 |
| Synthesis of ternary SiGeSn semiconductors on Si(100) via buffer layers M Bauer, C Ritter, PA Crozier, J Ren, J Menendez, G Wolf, J Kouvetakis Applied physics letters 83 (11), 2163-2165, 2003 | 145 | 2003 |
| Raman scattering in Ge1− ySny alloys VR D’costa, J Tolle, R Roucka, CD Poweleit, J Kouvetakis, J Menendez Solid State Communications 144 (5-6), 240-244, 2007 | 132 | 2007 |
| Next generation of Ge1− ySny (y= 0.01-0.09) alloys grown on Si (100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission G Grzybowski, RT Beeler, L Jiang, DJ Smith, J Kouvetakis, J Menendez Applied physics letters 101 (7), 2012 | 131 | 2012 |
