| High performance molybdenum disulfide amorphous silicon heterojunction photodetector MR Esmaeili-Rad, S Salahuddin Scientific reports 3 (1), 2345, 2013 | 171 | 2013 |
| Stability of nanocrystalline silicon bottom-gate thin film transistors with silicon nitride gate dielectric MR Esmaeili-Rad, F Li, A Sazonov, A Nathan Journal of Applied Physics 102 (6), 2007 | 50 | 2007 |
| Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements MR Esmaeili-Rad, A Sazonov, A Nathan Applied Physics Letters 91 (11), 2007 | 37 | 2007 |
| Optical properties of nanocrystalline silicon deposited by PECVD MR Esmaeili-Rad, A Sazonov, AG Kazanskii, AA Khomich, A Nathan Journal of Materials Science: Materials in Electronics 18, 405-409, 2007 | 26 | 2007 |
| Non-ohmic contact resistance and field-effect mobility in nanocrystalline silicon thin film transistors A Ahnood, K Ghaffarzadeh, A Nathan, P Servati, F Li, MR Esmaeili-Rad, ... Applied Physics Letters 93 (16), 2008 | 25 | 2008 |
| Blue-light-sensitive phototransistor for indirect X-ray image sensors MR Esmaeili-Rad, NP Papadopoulos, M Bauza, A Nathan, WS Wong IEEE Electron Device Letters 33 (4), 567-569, 2012 | 22 | 2012 |
| Analysis of the off current in nanocrystalline silicon bottom-gate thin-film transistors MR Esmaeili-Rad, A Sazonov, A Nathan Journal of Applied Physics 103 (7), 2008 | 17 | 2008 |
| How to Achieve High Mobility Thin Film Transistors by Direct Deposition of Silicon Using 13.56 MHz RF PECVD? CH Lee, A Sazonov, J Robertson, A Nathan, MR Esmaeili-Rad, P Servati, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 16 | 2006 |
| Vertical CNT-Si photodiode array A Ahnood, H Zhou, Q Dai, Y Vygranenko, Y Suzuki, MR Esmaeili-Rad, ... Nano letters 13 (9), 4131-4136, 2013 | 15 | 2013 |
| Ambipolar thin-film transistorsfabricated by PECVD nanocrystalline silicon AN Czang-Ho Lee , A. Sazonov , M. R. Esmaeili Rad, G. R. Chaji Proc. Mater. Res. Soc. Symp 910, A05-A22, 2006 | 15* | 2006 |
| High stability, low leakage nanocrystalline silicon bottom gate thin film transistors for AMOLED displays MR Esmaeili-Rad, A Sazonov, A Nathan 2006 International Electron Devices Meeting, 1-4, 2006 | 14 | 2006 |
| Photo-induced instability of nanocrystalline silicon TFTs M Bauza, A Ahnood, FM Li, Y Vygranenko, MR Esmaeili-Rad, G Chaji, ... Journal of Display Technology 6 (12), 589-591, 2010 | 13 | 2010 |
| Nanocrystalline silicon thin film transistor MR Esmaeili Rad University of Waterloo, 2008 | 9 | 2008 |
| Methods and apparatus for mitigating charge settling and lateral leakage current on organic light-emitting diode displays CW Lin, F Gui, HS Lin, H Nho, JW Ryu, J Tan, K Brahma, M Gharghi, ... US Patent 11,158,256, 2021 | 3 | 2021 |
| Display stack with integrated force input sensor MRE Rad, S Ono, TK Chang US Patent 10,496,218, 2019 | 2 | 2019 |
| Discussing pixel circuits for hybrid sensor and display pixel arrays NP Papadopoulos, M Yang, MR Esmaeili-Rad, M Sachdev, WS Wong IDW/AD 12, 4-7, 2012 | 2 | 2012 |
| Nanocrystalline Silicon Thin Film Transistors for High Performance Large Area Electronics MR Esmaeili-Rad, HJ Lee, A Sazonov, A Nathan International Journal of High Speed Electronics and Systems 18 (04), 1055-1068, 2008 | 2 | 2008 |
| Nanocrystalline Silicon Thin Film Transistors MR Rad, GR Chaji, CH Lee, D Striakhilev, A Sazonov, A Nathan ECS Transactions 33 (5), 205, 2010 | 1 | 2010 |
| Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application KW Shin, MR Esmaeili-Rad, A Sazonov, A Nathan MRS Online Proceedings Library (OPL) 1066, 1066-A16-07, 2008 | 1 | 2008 |
| Nanocrystalline silicon films deposited by RF PECVD for bottom-gate thin-film transistors MRE Rad, CH Lee, A Sazonov, A Nathan MRS Online Proceedings Library (OPL) 910, 0910-A22-13, 2006 | 1 | 2006 |
Arman AhnoodRMIT University在 rmit.edu.au 的电子邮件经过验证
