1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon S Zhu, B Shi, Q Li, KM Lau Applied Physics Letters 113 (22), 2018 | 63 | 2018 |
1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si B Shi, S Zhu, Q Li, CW Tang, Y Wan, EL Hu, KM Lau Applied Physics Letters 110 (12), 2017 | 62 | 2017 |
Continuous-wave optically pumped 1.55 μm InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on silicon B Shi, S Zhu, Q Li, Y Wan, EL Hu, KM Lau ACS Photonics 4 (2), 204-210, 2017 | 62 | 2017 |
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si S Zhu, B Shi, Q Li, KM Lau Optics express 26 (11), 14514-14523, 2018 | 46 | 2018 |
Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands Y Han, WK Ng, C Ma, Q Li, S Zhu, CCS Chan, KW Ng, S Lennon, ... Optica 5 (8), 918-923, 2018 | 45 | 2018 |
1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon Y Xue, W Luo, S Zhu, L Lin, B Shi, KM Lau Optics Express 28 (12), 18172-18179, 2020 | 44 | 2020 |
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Y Han, Q Li, KW Ng, S Zhu, KM Lau Nanotechnology 29 (22), 225601, 2018 | 32 | 2018 |
Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si S Zhu, B Shi, KM Lau Optics letters 44 (18), 4566-4569, 2019 | 30 | 2019 |
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths Y Han, Q Li, S Zhu, KW Ng, KM Lau Applied Physics Letters 111 (21), 2017 | 27 | 2017 |
1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks S Zhu, B Shi, Y Wan, EL Hu, KM Lau Optics letters 42 (4), 679-682, 2017 | 26 | 2017 |
Parametric study of high-performance 1.55 μm InAs quantum dot microdisk lasers on Si S Zhu, B Shi, Q Li, Y Wan, KM Lau Optics Express 25 (25), 31281-31293, 2017 | 17 | 2017 |
Lasing characteristics and reliability of 1550 nm laser diodes monolithically grown on silicon B Shi, S Pinna, H Zhao, S Zhu, J Klamkin physica status solidi (a) 218 (3), 2000374, 2021 | 14 | 2021 |
MOCVD growth of InP-based 1.3 μm quantum dash lasers on (001) Si W Luo, Y Xue, B Shi, S Zhu, X Dong, KM Lau Applied Physics Letters 116 (14), 2020 | 10 | 2020 |
Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers B Shi, S Pinna, W Luo, H Zhao, S Zhu, ST Suran Brunelli, KM Lau, ... Optics Express 28 (18), 26823-26835, 2020 | 9 | 2020 |
Low Dark Current and High Speed InGaAs Photodiode on CMOS-Compatible Silicon by Heteroepitaxy B Song, B Shi, ST Šuran-Brunelli, S Zhu, J Klamkin IEEE Journal of Selected Topics in Quantum Electronics 28 (2: Optical …, 2021 | 7 | 2021 |
Controlled single-mode emission in quantum dot micro-lasers S Zhu, X Ma, C Liu, W Luo, J Liu, B Shi, W Guo, KM Lau Optics Express 29 (9), 13193-13203, 2021 | 4 | 2021 |
High sensitive ammonia gas sensor based on graphene coated microfiber XL X Sun, Q Sun, S Zhu, Y Yuan, Z Huang PIERS Proceedings, 2015 | 3 | 2015 |
Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy B Song, B Shi, S Zhu, SŠ Brunelli, J Klamkin 2021 Asia Communications and Photonics Conference (ACP), 1-3, 2021 | 2 | 2021 |
1.6 µm continuous-wave lasing from InAs/AlGaInAs quantum dash micro-disk lasers grown on (001) silicon L Lin, W Luo, S Zhu, KM Lau 2020 IEEE Photonics Conference (IPC), 1-2, 2020 | 2 | 2020 |
Growth Optimization of InGaAs/GaAs Multi Quantum Well Microdisk Lasers on Flat-bottom CMOS-compatible (001) Si by Selective Area Heteroepitaxy B Shi, S Zhu, B Song, J Klamkin 2022 Compound Semiconductor Week (CSW), 1-2, 2022 | 1 | 2022 |