| High-Power Modular Multilevel Converters With SiC JFETs D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ... IEEE Transactions on Power Electronics 27, 28-36, 2012 | 230 | 2012 |
| Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013 | 106 | 2013 |
| Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee IEEE, 2013 | 55 | 2013 |
| Design and characterization of newly developed 10 kV 2 A SiC pin diode for soft-switching industrial power supply M Bakowski, P Ranstad, JK Lim, W Kaplan, SA Reshanov, A Schoner, ... IEEE Transactions on Electron Devices 62 (2), 366-373, 2014 | 31 | 2014 |
| Comparison of thermal stress during short-circuit in different types of 1.2-kV SiC transistors based on experiments and simulations DP Sadik, J Colmenares, JK Lim, M Bakowski, HP Nee IEEE Transactions on Industrial Electronics 68 (3), 2608-2616, 2020 | 23 | 2020 |
| Investigation of long-term parameter variations of SiC power MOSFETs DP Sadik, JK Lim, P Ranstad, HP Nee 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 20 | 2015 |
| Comparison of total losses of 1.2 kV SiC JFET and BJT in DC-DC converter including gate driver JK Lim, G Tolstoy, D Peftitsis, J Rabkowski, M Bakowski, HP Nee Materials Science Forum 679, 649-652, 2011 | 15 | 2011 |
| Merits of buried grid technology for advanced SiC device concepts M Bakowski, JK Lim, W Kaplan, A Schöner ECS Transactions 41 (8), 155, 2011 | 13 | 2011 |
| Humidity testing of SiC power MOSFETs—An update DP Sadik, JK Lim, F Giezendanner, P Ranstad, HP Nee 2017 19th European Conference on Power Electronics and Applications (EPE'17 …, 2017 | 12 | 2017 |
| Merits of buried grid technology for SiC JBS diodes M Bakowski, JK Lim, W Kaplan ECS Transactions 50 (3), 415, 2013 | 10 | 2013 |
| Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250 °C JK Lim, M Bakowski, HP Nee Materials Science Forum 645, 961-964, 2010 | 10 | 2010 |
| Modeling of the Impact of Parameter Spread on the Switching Performance of Parallel-Connected SiC VJFETs JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee Materials Science Forum 740, 1098-1102, 2013 | 9 | 2013 |
| 4H‐and 6H‐SiC UV photodetectors L Östlund, Q Wang, R Esteve, S Almqvist, D Rihtnesberg, S Reshanov, ... physica status solidi c 9 (7), 1680-1682, 2012 | 8 | 2012 |
| Design Optimization of a High Temperature 1.2-kV 4H-SiC Buried Grid JBS Rectifier H Elahipanah, N Thierry-Jebali, SA Reshanov, W Kaplan, A Zhang, ... Materials Science Forum, 2017 | 7 | 2017 |
| Impact of package parasitics on switching performance K Kostov, JK Lim, YF Zhang, M Bakowski Materials Science Forum 858, 1057-1060, 2016 | 7 | 2016 |
| High-efficiency power conversion using silicon carbide power electronics HP Nee, J Rabkowski, D Peftitsis, G Tolstoy, J Colmenares, DP Sadik, ... Materials Science Forum 778, 1083-1088, 2014 | 7 | 2014 |
| Investigation of a finned baseplate material and thickness variation for thermal performance of a SiC power module Y Zhang, I Belov, M Bakowski, JK Lim, P Leisner, HP Nee 2014 15th International Conference on Thermal, Mechanical and Mulit-Physics …, 2014 | 6 | 2014 |
| Experimental comparison of different gate-driver configurations for parallel-connection of normally-on SiC JFETs D Peftitsis, JK Lim, J Rabkowski, G Tolstoy, HP Nee Proceedings of The 7th International Power Electronics and Motion Control …, 2012 | 6 | 2012 |
| Analysis of 1.2 kV SiC buried-grid VJFETs JK Lim, M Bakowski Physica Scripta 2010 (T141), 014008, 2010 | 5 | 2010 |
| Full epitaxial trench type buried grid SiC JBS diodes SA Reshanov, A Schöner, W Kaplan, A Zhang, JK Lim, M Bakowski ECS Transactions 64 (7), 289, 2014 | 4 | 2014 |
