受强制性开放获取政策约束的文章 - Niraj Kumar Singh了解详情
无法在其他位置公开访问的文章：4 篇
Work function optimization for enhancement of sensitivity of dual-material (DM), double-gate (DG), junctionless MOSFET-based biosensor
M Kumari, NK Singh, M Sahoo, H Rahaman
Applied Physics A 127, 1-8, 2021
强制性开放获取政策： Department of Science & Technology, India
Analytical modeling of short-channel TMD TFET considering effect of fringing field and 2-D junctions depletion regions
NK Singh, M Sahoo
IEEE Transactions on Electron Devices 69 (2), 843-850, 2021
强制性开放获取政策： Department of Science & Technology, India
Comparative investigation of different doping techniques in TMD Tunnel FET for Subdeca nanometer technology nodes
NK Singh, M Sahoo
Journal of Electronic Materials 52 (8), 5327-5336, 2023
强制性开放获取政策： Department of Science & Technology, India
Design of low-power and high-performance 10 nm SRAM using Electrostatically doped TMD TFET
NK Singh, R Shankar, S Verma, M Sahoo
2023 International Symposium on Devices, Circuits and Systems (ISDCS) 1, 01-06, 2023
强制性开放获取政策： Department of Science & Technology, India
可在其他位置公开访问的文章：2 篇
2-D analytical modeling and simulation of dual material, double gate, gate stack engineered, junctionless MOSFET based biosensor with enhanced sensitivity
M Kumari, NK Singh, M Sahoo, H Rahaman
Silicon, 1-12, 2022
强制性开放获取政策： Department of Science & Technology, India
A compact short-channel analytical drain current model of asymmetric dual-gate TMD FET in subthreshold region including fringing field effects
NK Singh, M Kumari, M Sahoo
IEEE Access 8, 207982-207990, 2020
强制性开放获取政策： Department of Science & Technology, India
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