| Electronic and optical properties of two-dimensional GaN from first-principles N Sanders, D Bayerl, G Shi, KA Mengle, E Kioupakis Nano letters 17 (12), 7345-7349, 2017 | 179 | 2017 |
| Band structure and carrier effective masses of boron arsenide: Effects of quasiparticle and spin-orbit coupling corrections K Bushick, K Mengle, N Sanders, E Kioupakis Applied physics letters 114 (2), 2019 | 66 | 2019 |
| Time reversal symmetry breaking superconductivity in topological materials Y Qiu, KN Sanders, J Dai, JE Medvedeva, W Wu, P Ghaemi, T Vojta, ... arXiv preprint arXiv:1512.03519, 2015 | 46 | 2015 |
| Deep ultraviolet luminescence due to extreme confinement in monolayer GaN/Al (Ga) N nanowire and planar heterostructures A Aiello, Y Wu, A Pandey, P Wang, W Lee, D Bayerl, N Sanders, Z Deng, ... Nano letters 19 (11), 7852-7858, 2019 | 43 | 2019 |
| Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2 S Chae, K Mengle, K Bushick, J Lee, N Sanders, Z Deng, Z Mi, ... Applied Physics Letters 118 (26), 2021 | 32 | 2021 |
| Thermal conductivity of rutile germanium dioxide S Chae, KA Mengle, R Lu, A Olvera, N Sanders, J Lee, PFP Poudeu, ... Applied Physics Letters 117 (10), 2020 | 30 | 2020 |
| Phonon-and defect-limited electron and hole mobility of diamond and cubic boron nitride: A critical comparison N Sanders, E Kioupakis Applied Physics Letters 119 (6), 2021 | 21 | 2021 |
| Electronic and optical properties of two-dimensional α-PbO from first principles S Das, G Shi, N Sanders, E Kioupakis Chemistry of Materials 30 (20), 7124-7129, 2018 | 19 | 2018 |
| Experimental and theoretical study of hole scattering in RF sputtered p-type Cu2O thin films J Jo, Z Deng, N Sanders, E Kioupakis, RL Peterson Applied Physics Letters 120 (11), 2022 | 8 | 2022 |
| Increasing the mobility and power-electronics figure of merit of AlGaN with atomically thin AlN/GaN digital-alloy superlattices N Pant, W Lee, N Sanders, E Kioupakis Applied Physics Letters 121 (3), 2022 | 6 | 2022 |
| Time reversal symmetry breaking superconductivity in topological materials (2015) Y Qiu, KN Sanders, J Dai, JE Medvedeva, W Wu, P Ghaemi, T Vojta, ... arXiv preprint arXiv:1512.03519, 0 | 5 | |
| Electron-Phonon Scattering and Mobility in Atomically Thin AlN/GaN Superlattices from First Principles N Pant, W Lee, N Sanders, E Kioupakis APS March Meeting Abstracts 2022, G48. 006, 2022 | | 2022 |
| Computational discovery of extreme-gap semiconductors S Chae, N Sanders, K Mengle, J Heron, E Kioupakis APS March Meeting Abstracts 2022, B47. 003, 2022 | | 2022 |
| Computational discovery of ultra-wide-band-gap semiconductors E Kioupakis, S Chae, K Mengle, K Bushick, N Sanders, N Pant, S Dagli, ... APS March Meeting Abstracts 2021, J56. 001, 2021 | | 2021 |
| Dependence of 2D nitride electronic and optical properties on heterostructure stacking orientation N Sanders, E Kioupakis Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Deep ultraviolet luminescence and charge-transfer excitons in atomically thin GaN quantum wells W Lee, D Bayerl, N Sanders, Z Deng, E Kioupakis Bulletin of the American Physical Society 65, 2020 | | 2020 |
| Effect of stacking orientation on the electronic and optical properties of 2D nitride heterostructures N Sanders, E Kioupakis APS March Meeting Abstracts 2019, B15. 013, 2019 | | 2019 |
| Band structure and optical properties of boron arsenide (BAs): effects of quasiparticle corrections, spin-orbit coupling, and phonon-assisted optical transitions K Bushick, K Mengle, N Sanders, E Kioupakis APS March Meeting Abstracts 2019, L22. 006, 2019 | | 2019 |
| Electronic and optical properties of two-dimensional III-nitrides from first principles N Sanders, D Bayerl, G Shi, K Mengle, E Kioupakis APS March Meeting Abstracts 2018, F37. 013, 2018 | | 2018 |
| Electronic and optical properties of two-dimensional GaN from first-principles calculations N Sanders, D Bayerl, G Shi, E Kioupakis APS March Meeting Abstracts 2017, P23. 005, 2017 | | 2017 |
