p-type doping of MoS2 thin films using Nb MR Laskar, DN Nath, L Ma, EW Lee, CH Lee, T Kent, Z Yang, R Mishra, ... Applied Physics Letters 104 (9), 2014 | 345 | 2014 |
Layer-transferred MoS2/GaN PN diodes EW Lee, CH Lee, PK Paul, L Ma, WD McCulloch, S Krishnamoorthy, Y Wu, ... Applied Physics Letters 107 (10), 2015 | 80 | 2015 |
Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V− 1 s− 1 L Ma, DN Nath, EW Lee, CH Lee, M Yu, A Arehart, S Rajan, Y Wu Applied Physics Letters 105 (7), 2014 | 77 | 2014 |
High current density 2D/3D MoS2/GaN Esaki tunnel diodes S Krishnamoorthy, EW Lee, CH Lee, Y Zhang, WD McCulloch, ... Applied Physics Letters 109 (18), 2016 | 74 | 2016 |
Growth and electrical characterization of two-dimensional layered MoS2/SiC heterojunctions EW Lee, L Ma, DN Nath, CH Lee, A Arehart, Y Wu, S Rajan Applied Physics Letters 105 (20), 2014 | 52 | 2014 |
Transferred large area single crystal MoS2 field effect transistors CH Lee, W McCulloch, EW Lee, L Ma, S Krishnamoorthy, J Hwang, Y Wu, ... Applied Physics Letters 107 (19), 2015 | 30 | 2015 |
A self-limiting layer-by-layer etching technique for 2H-MoS2 CH Lee, EW Lee, W McCulloch, Z Jamal-Eddine, S Krishnamoorthy, ... Applied Physics Express 10 (3), 035201, 2017 | 20 | 2017 |
Electron transport in large-area epitaxial MoS2 DN Nath, L Ma, CH Lee, E Lee, A Arehart, Y Wu, S Rajan 72nd Device Research Conference, 89-90, 2014 | 2 | 2014 |
p-type doping in CVD grown MoS2 using Nb M Laskar, DN Nath, L Ma, E Lee, CH Lee, T Kent, Z Yang, R Mishra, ... arXiv preprint arXiv:1310.6494, 2013 | 2 | 2013 |
Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors EW Lee The Ohio State University, 2016 | 1 | 2016 |
Demonstration of 2D/3D p-MoS2/n-SiC junction EW Lee, L Ma, DN Nath, CH Lee, Y Wu, S Rajan 72nd Device Research Conference, 79-80, 2014 | | 2014 |