| Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures D Kohen, HB Profijt US Patent 10,236,177, 2019 | 343 | 2019 |
| Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber D Kohen, J Tolle US Patent 10,510,536, 2019 | 321 | 2019 |
| Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures D Kohen, N Bhargava, J Tolle, V D'costa US Patent 10,535,516, 2020 | 299 | 2020 |
| Methods for depositing a boron doped silicon germanium film D Kohen US Patent 11,031,242, 2021 | 276 | 2021 |
| Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation J Tolle, J Margetis, D Kohen US Patent 11,557,474, 2023 | 234 | 2023 |
| Methods for forming a semiconductor structure and related semiconductor structures D Kohen, HB Profijt, A Kretzschmar US Patent App. 17/145,499, 2021 | 219 | 2021 |
| Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods A Kajbafvala, J Margetis, X Sun, D Kohen, D Pierreux US Patent 11,996,289, 2024 | 191 | 2024 |
| Cu2ZnSn(S 1-x Se x)4 based solar cell produced by selenization of vacuum deposited precursors L Grenet, S Bernardi, D Kohen, C Lepoittevin, S Noël, N Karst, A Brioude, ... Solar Energy Materials and Solar Cells 101, 11-14, 2012 | 97 | 2012 |
| Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ... ECS transactions 19 (5), 375, 2009 | 82 | 2009 |
| Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan Applied Physics Express 9 (8), 086501, 2016 | 54 | 2016 |
| Selective epitaxial growth of high-P Si: P for dource/drain formation in advanced Si nFETs E Rosseel, SK Dhayalan, A Hikavyy, R Loo, H Profijt, D Kohen, S Kubicek, ... ECS Transactions 75 (8), 347-359, 2016 | 50 | 2016 |
| Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ... Materials Science in Semiconductor Processing 70, 38-43, 2017 | 49 | 2017 |
| Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration C Porret, A Hikavyy, JFG Granados, S Baudot, A Vohra, B Kunert, ... ECS Journal of Solid State Science and Technology 8 (8), P392, 2019 | 35 | 2019 |
| The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD–Application to a 200mm GaAs virtual substrate D Kohen, S Bao, KH Lee, KEK Lee, CS Tan, SF Yoon, EA Fitzgerald Journal of Crystal Growth 421, 58-65, 2015 | 35 | 2015 |
| Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology D Kohen, C Cayron, E De Vito, V Tileli, P Faucherand, C Morin, A Brioude, ... Journal of crystal growth 341 (1), 12-18, 2012 | 34 | 2012 |
| Cu2ZnSn (S1− xSex) 4 thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process G Altamura, L Grenet, C Bougerol, E Robin, D Kohen, H Fournier, ... Journal of alloys and compounds 588, 310-315, 2014 | 27 | 2014 |
| Epitaxial GeSn: Impact of process conditions on material quality R Loo, Y Shimura, S Ike, A Vohra, T Stoica, D Stange, D Buca, D Kohen, ... Semiconductor science and technology 33 (11), 114010, 2018 | 26 | 2018 |
| Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ... Journal of Crystal Growth 478, 64-70, 2017 | 23 | 2017 |
| Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS C Merckling, J Penaud, D Kohen, F Bellenger, A Alian, G Brammertz, ... Microelectronic engineering 86 (7-9), 1592-1595, 2009 | 22 | 2009 |
| SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ... ECS Transactions 75 (8), 439, 2016 | 20 | 2016 |
