| Large grain polycrystalline silicon from rice husk DN Bose, PA Govindacharyulu, HD Banerjee Solar Energy Materials 7 (3), 319-321, 1982 | 55 | 1982 |
| Ionic conductivity and dielectric measurements in single crystal β AgI PA Govindacharyulu, DN Bose, SK Suri Journal of Physics and Chemistry of Solids 39 (9), 961-966, 1978 | 33 | 1978 |
| Electronic conductivity of AgI using DC polarization and charge transfer techniques D Mazumdar, PA Govindacharyulu, DN Bose Journal of Physics and Chemistry of Solids 43 (9), 933-940, 1982 | 17 | 1982 |
| Physics of silver halides and their applications DN Bose, PA Govindacharyulu Bulletin of Materials Science 2, 221-231, 1980 | 17 | 1980 |
| A micropower analog hearing aid on low voltage CMOS digital process AB Bhattacharyya, RS Rana, SK Guha, R Bahl, R Anand, MJ Zarabi, ... Proceedings of 9th International Conference on VLSI Design, 85-89, 1996 | 12 | 1996 |
| Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films VR Katti, PA Govindacharyulu, DN Bose Thin Solid Films 14 (1), 143-148, 1972 | 11 | 1972 |
| Substrate bias dependence of short-channel MOSFET threshold voltage-a novel approach A Roychaudhuri, M Jha, SK Sharma, PA Govindacharyulu, MJ Zarabi IEEE transactions on electron devices 35 (2), 167-173, 1988 | 10 | 1988 |
| Photoconductivity in -AgI PA Govindacharyulu, DN Bose Physical Review B 19 (12), 6532, 1979 | 10 | 1979 |
| Progress in solar-grade silicon from rice husk ash DN Bose, PA Govindacharyulu Pergamonpress, Perth, 2735-2781, 1984 | 7 | 1984 |
| Drift mobility of holes in single‐crystal β‐AgI PA Govindacharyulu, DN Bose Journal of Applied Physics 48 (3), 1381-1382, 1977 | 6 | 1977 |
| Studies on the dependence of breakdown voltages LDMOS devices on their structure and doping profiles of LDD regions SR Marjorie, PA Govindacharyulu, KL Kishore 2012 Asia Pacific Conference on Postgraduate Research in Microelectronics …, 2012 | 4 | 2012 |
| Low-cost USB2. 0 to CAN2. 0 Bridge Design for Automotive Electronic Circuit NAA Khan, MS Sundar, S Sambiah, PA Govindacharyulu International Journal of Electronics Engineering, 2010 | 2 | 2010 |
| Design of a comprehensive process evaluation vehicle for development of small geometry CMOS process A Bandyopadhyay, PA Govindacharyulu, MJ Zarabi Microelectronics Reliability 24 (5), 905-909, 1984 | 2 | 1984 |
| 2 D analysis of self aligned LDMOS structures in terms of breakdown voltages SR Marjorie, PA Govindacharyulu, KL Kishore 2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK …, 2019 | 1 | 2019 |
| An Engineering Curriculum to Meet the Challenges of the Present Decade KJ Sankar, M Satyam, PA Govindacharyulu, ES Rao Journal of Engineering Education Transformations 29 (Special Issue), 2016 | 1 | 2016 |
| Study of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) using 2% SiH4/N₂-With and Without He S Dayal, R Raman, R Gulati, HP Vyas, KC Kumar, A Rao, ... Physics of Semiconductor Devices 4746, 1075, 2002 | 1 | 2002 |
| Reduction of fixed loss in buried-channel CCD's operating at 77 K S Bendapudi, M Jha, PA Govindacharyulu, MJ Zarabi IEEE electron device letters 14 (11), 527-529, 1993 | 1 | 1993 |
| Silver iodide growth, electrical and optical-properties PA Govindacharyulu, DN Bose Indian Journal of Physics A and Proceedings of the Indian Association for …, 1979 | 1 | 1979 |
| APPLICATION OF BJT AS A BIDIRECTIONAL SWITCH FOR LOW VOLTAGE CIRCUIT PROTECTION GR Padmini, M Satyam, K Lalkishore, PA Govindacharyulu | | 2006 |
| Effect of Gate Profile on the Characteristics of 0.5 µm GaAs MESFETs AA Naik, DS Rawal, S Prabhakar, GS Saravanan, BK Sehgal, R Gulati, ... Physics of Semiconductor Devices 4746, 1148, 2002 | | 2002 |
