受强制性开放获取政策约束的文章 - Boyan Wang了解详情
可在其他位置公开访问的文章：13 篇
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Y Qin, B Albano, J Spencer, JS Lundh, B Wang, C Buttay, M Tadjer, ...
Journal of physics D: applied physics 56 (9), 093001, 2023
强制性开放获取政策： US National Science Foundation
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension
B Wang, M Xiao, J Spencer, Y Qin, K Sasaki, MJ Tadjer, Y Zhang
IEEE Electron Device Letters 44 (2), 221-224, 2022
强制性开放获取政策： US National Science Foundation
Low thermal resistance (0.5 K/W) Ga₂O₃ Schottky rectifiers with double-side packaging
B Wang, M Xiao, J Knoll, C Buttay, K Sasaki, GQ Lu, C Dimarino, Y Zhang
IEEE Electron Device Letters 42 (8), 1132-1135, 2021
强制性开放获取政策： US National Science Foundation, US Department of Energy
Packaging of a 10-kV double-side cooled silicon carbide diode module with thin substrates coated by a nonlinear resistive polymer-nanoparticle composite
Z Zhang, S Lu, B Wang, Y Zhang, N Yun, W Sung, KDT Ngo, GQ Lu
IEEE Transactions on Power Electronics 37 (12), 14462-14470, 2022
强制性开放获取政策： US Department of Energy, US Department of Defense
NiO junction termination extension for high-voltage (> 3 kV) Ga2O3 devices
M Xiao, B Wang, J Spencer, Y Qin, M Porter, Y Ma, Y Wang, K Sasaki, ...
Applied Physics Letters 122 (18), 2023
强制性开放获取政策： US National Science Foundation
First demonstration of vertical superjunction diode in GaN
M Xiao, Y Ma, Z Du, Y Qin, K Liu, K Cheng, F Udrea, A Xie, E Beam, ...
2022 International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense, UK Engineering and …
Chip size minimization for wide and ultrawide bandgap power devices
B Wang, M Xiao, Z Zhang, Y Wang, Y Qin, Q Song, GQ Lu, K Ngo, ...
IEEE Transactions on Electron Devices 70 (2), 633-639, 2023
强制性开放获取政策： US Department of Energy
1 kV GaN-on-Si quasi-vertical Schottky rectifier
Y Qin, M Xiao, R Zhang, Q Xie, T Palacios, B Wang, Y Ma, I Kravchenko, ...
IEEE Electron Device Letters 44 (7), 1052-1055, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, Netherlands …
2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness
Y Qin, M Porter, M Xiao, Z Du, H Zhang, Y Ma, J Spencer, B Wang, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
强制性开放获取政策： US National Science Foundation, US Department of Energy, US Department of …
Investigation of deep defects and their effects on the properties of NiO/β-Ga2O3 heterojuncion diodes
A Almalki, L Madani, N Sengouga, S Alhassan, S Alotaibi, A Alhassni, ...
Materials Today Electronics 4, 100042, 2023
强制性开放获取政策： US National Science Foundation, Fundação de Amparo à Pesquisa do Estado de …
Electro-thermal device-package co-design for ultra-wide bandgap gallium oxide power devices
B Albano, B Wang, Y Zhang, C DiMarino
2022 IEEE Energy Conversion Congress and Exposition (ECCE), 1-7, 2022
强制性开放获取政策： US National Science Foundation
How to achieve low thermal resistance and high electrothermal ruggedness in Ga2O3 devices?
Y Zhang, B Wang, M Xiao, J Spencer, R Zhang, J Knoll, C DiMarino, ...
ECS Transactions 104 (5), 21, 2021
强制性开放获取政策： US National Science Foundation
NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed
M Xiao, B Wang, R Zhang, Q Song, J Spencer, Z Du, Y Qin, K Sasaki, ...
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
强制性开放获取政策： US National Science Foundation
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