| Room-temperature high spin–orbit torque due to quantum confinement in sputtered BixSe(1–x) films M Dc, R Grassi, JY Chen, M Jamali, D Reifsnyder Hickey, D Zhang, ... Nature materials 17 (9), 800-807, 2018 | 471 | 2018 |
| Multilayer black phosphorus as a versatile mid-infrared electro-optic material C Lin, R Grassi, T Low, AS Helmy Nano letters 16 (3), 1683-1689, 2016 | 198 | 2016 |
| Midinfrared electro-optic modulation in few-layer black phosphorus R Peng, K Khaliji, N Youngblood, R Grassi, T Low, M Li Nano letters 17 (10), 6315-6320, 2017 | 127 | 2017 |
| Graphene-edge dielectrophoretic tweezers for trapping of biomolecules A Barik, Y Zhang, R Grassi, BP Nadappuram, JB Edel, T Low, SJ Koester, ... Nature communications 8 (1), 1867, 2017 | 90 | 2017 |
| Scaling of the energy gap in pattern-hydrogenated graphene R Grassi, T Low, M Lundstrom Nano letters 11 (11), 4574-4578, 2011 | 61 | 2011 |
| Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures C Choi, J Huang, HC Cheng, H Kim, AK Vinod, SH Bae, VO Özçelik, ... npj 2D Materials and Applications 2 (1), 30, 2018 | 56 | 2018 |
| Optimization of n- and p-type TFETs Integrated on the Same Technology Platform E Baravelli, E Gnani, R Grassi, A Gnudi, S Reggiani, G Baccarani IEEE transactions on electron devices 61 (1), 178-185, 2013 | 55 | 2013 |
| Graphene-base heterojunction transistor: An attractive device for terahertz operation V Di Lecce, R Grassi, A Gnudi, E Gnani, S Reggiani, G Baccarani IEEE transactions on electron devices 60 (12), 4263-4268, 2013 | 54 | 2013 |
| Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs R Grassi, S Poli, E Gnani, A Gnudi, S Reggiani, G Baccarani Solid-state electronics 53 (4), 462-467, 2009 | 48 | 2009 |
| Spatially controlled electrostatic doping in graphene p-i-n junction for hybrid silicon photodiode T Li, D Mao, NW Petrone, R Grassi, H Hu, Y Ding, Z Huang, GQ Lo, ... npj 2D Materials and Applications 2 (1), 36, 2018 | 36 | 2018 |
| Contact-induced negative differential resistance in short-channel graphene FETs R Grassi, T Low, A Gnudi, G Baccarani IEEE transactions on electron devices 60 (1), 140-146, 2012 | 33 | 2012 |
| Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells G Zerveas, E Caruso, G Baccarani, L Czornomaz, N Daix, D Esseni, ... Solid-State Electronics 115, 92-102, 2016 | 30 | 2016 |
| High-performance black phosphorus MOSFETs using crystal orientation control and contact engineering N Haratipour, S Namgung, R Grassi, T Low, SH Oh, SJ Koester IEEE Electron Device Letters 38 (5), 685-688, 2017 | 29 | 2017 |
| Electrical control of excitons in van der Waals heterostructures with type-II band alignment A Chaves, JG Azadani, VO Özçelik, R Grassi, T Low Physical Review B 98 (12), 121302, 2018 | 27 | 2018 |
| Anomalous temperature dependence in metal–black phosphorus contact X Li, R Grassi, S Li, T Li, X Xiong, T Low, Y Wu Nano letters 18 (1), 26-31, 2018 | 27 | 2018 |
| Graphene base transistors: A simulation study of DC and small-signal operation V Di Lecce, R Grassi, A Gnudi, E Gnani, S Reggiani, G Baccarani IEEE transactions on electron devices 60 (10), 3584-3591, 2013 | 27 | 2013 |
| Mode space approach for tight binding transport simulation in graphene nanoribbon FETs R Grassi, A Gnudi, E Gnani, S Reggiani, G Baccarani IEEE transactions on nanotechnology 10 (3), 371-378, 2010 | 25 | 2010 |
| Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains R Grassi, A Gnudi, V Di Lecce, E Gnani, S Reggiani, G Baccarani IEEE Transactions on electron devices 61 (2), 617-624, 2013 | 20 | 2013 |
| Spatial/temporal photocurrent and electronic transport in monolayer molybdenum disulfide grown by chemical vapor deposition Z Yang, R Grassi, M Freitag, YH Lee, T Low, W Zhu Applied Physics Letters 108 (8), 2016 | 16 | 2016 |
| Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback R Grassi, A Gnudi, V Di Lecce, E Gnani, S Reggiani, G Baccarani Solid-state electronics 100, 54-60, 2014 | 16 | 2014 |
