| Silicon waveguided components for the long-wave infrared region RA Soref, SJ Emelett, WR Buchwald Journal of Optics A: Pure and Applied Optics 8 (10), 840, 2006 | 439 | 2006 |
| Wideband perfect light absorber at midwave infrared using multiplexed metal structures J Hendrickson, J Guo, B Zhang, W Buchwald, R Soref Optics letters 37 (3), 371-373, 2012 | 270 | 2012 |
| Sub-wavelength plasmonic modes in a conductor-gap-dielectric system with a nanoscale gap I Avrutsky, R Soref, W Buchwald Optics Express 18 (1), 348-363, 2010 | 193 | 2010 |
| Ultra-wideband source using gallium arsenide photoconductive semiconductor switches JSH Schoenberg, JW Burger, JS Tyo, MD Abdalla, MC Skipper, ... IEEE transactions on plasma science 25 (2), 327-334, 1997 | 141 | 1997 |
| Longwave plasmonics on doped silicon and silicides R Soref, RE Peale, W Buchwald Optics express 16 (9), 6507-6514, 2008 | 140 | 2008 |
| Infrared surface plasmons on heavily doped silicon M Shahzad, G Medhi, RE Peale, WR Buchwald, JW Cleary, R Soref, ... Journal of Applied Physics 110 (12), 2011 | 120 | 2011 |
| IR permittivities for silicides and doped silicon JW Cleary, RE Peale, DJ Shelton, GD Boreman, CW Smith, M Ishigami, ... JOSA B 27 (4), 730-734, 2010 | 96 | 2010 |
| Multi-peak electromagnetically induced transparency (EIT)-like transmission from bull’s-eye-shaped metamaterial J Kim, R Soref, WR Buchwald Optics express 18 (17), 17997-18002, 2010 | 88 | 2010 |
| Spin-dependent Shockley-Read recombination of electrons and holes in indirect-band-gap semiconductor pn junction diodes FC Rong, WR Buchwald, EH Poindexter, WL Warren, DJ Keeble Solid-state electronics 34 (8), 835-841, 1991 | 86 | 1991 |
| Revised role for the Poole–Frenkel effect in deep‐level characterization WR Buchwald, NM Johnson Journal of applied physics 64 (2), 958-961, 1988 | 79 | 1988 |
| Si/Ge junctions formed by nanomembrane bonding AM Kiefer, DM Paskiewicz, AM Clausen, WR Buchwald, RA Soref, ... ACS nano 5 (2), 1179-1189, 2011 | 69 | 2011 |
| Ultrasensitive silicon photonic-crystal nanobeam electro-optical modulator: design and simulation J Hendrickson, R Soref, J Sweet, W Buchwald Optics express 22 (3), 3271-3283, 2014 | 67 | 2014 |
| A high-current and high-temperature 6H-SiC thyristor K Xie, JH Zhao, JR Flemish, T Burke, WR Buchwald, G Lorenzo, H Singh IEEE Electron Device Letters 17 (3), 142-144, 1996 | 65 | 1996 |
| Low damage and residue‐free dry etching of 6H–SiC using electron cyclotron resonance plasma K Xie, JR Flemish, JH Zhao, WR Buchwald, L Casas Applied physics letters 67 (3), 368-370, 1995 | 65 | 1995 |
| Generation of P b Centers by High Electric Fields: Thermochemical Effects GJ Gerardi, EH Poindexter, PJ Caplan, M Harmatz, WR Buchwald, ... Journal Of The Electrochemical Society 136 (9), 2609, 1989 | 48 | 1989 |
| New metastable defects in GaAs WR Buchwald, NM Johnson, LP Trombetta Applied physics letters 50 (15), 1007-1009, 1987 | 43 | 1987 |
| Adjustable microchip ring trap for cold atoms and molecules PM Baker, JA Stickney, MB Squires, JA Scoville, EJ Carlson, ... Physical Review A—Atomic, Molecular, and Optical Physics 80 (6), 063615, 2009 | 40 | 2009 |
| Electrically detected magnetic resonance of a transition metal related recombination center in Si p–n diodes FC Rong, GJ Gerardi, WR Buchwald, EH Poindexter, MT Umlor, ... Applied physics letters 60 (5), 610-612, 1992 | 39 | 1992 |
| Hydrogen anneal of E′ centers in thermal SiO2 on Si Z Li, SJ Fonash, EH Poindexter, M Harmatz, F Rong, WR Buchwald Journal of non-crystalline solids 126 (1-2), 173-176, 1990 | 38 | 1990 |
| Tunable two-dimensional plasmon resonances in an InGaAs/InP high electron mobility transistor H Saxena, RE Peale, WR Buchwald Journal of Applied Physics 105 (11), 2009 | 37 | 2009 |
