| Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model RR Malik, MA Mir, Z Bhat, A Pampori, YS Chauhan, SA Ahsan IEEE Journal of the Electron Devices Society 9, 789-797, 2021 | 6 | 2021 |
| Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic RON Behavior in AlGaN/GaN HEMTs—Part II RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices 70 (12), 6183-6189, 2023 | 3 | 2023 |
| Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs MA Mir, V Joshi, RR Chaudhuri, MA Munshi, RR Malik, M Shrivastava 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 3 | 2023 |
| Signatures of positive gate over-drive induced hole trap generation and its impact on p-GaN gate stack instability in AlGaN/GaN HEMTs RR Malik, V Joshi, RR Chaudhuri, MA Mir, Z Khan, AN Shaji, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | 2 | 2023 |
| Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si RR Chaudhuri, V Joshi, RR Malik, M Shrivastava IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| Unique lattice temperature dependent evolution of hot electron distribution in GaN HEMTs on C-doped GaN buffer and its reliability consequences RR Chaudhuri, V Joshi, A Gupta, T Joshi, RR Malik, MA Mir, SD Gupta, ... 2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023 | 1 | 2023 |
| On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs MA Mir, A Thakare, MA Munshi, V Avinash, S Wani, Z Khan, R Chaudhuri, ... 2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024 | | 2024 |
| Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs RR Chaudhuri, V Joshi, SS Wani, SR Karthik, RR Malik, M Shrivastava 2024 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2024 | | 2024 |
| Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic Behavior in AlGaN/GaN HEMTs—Part I RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes RR Malik, V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs MA Munshi, MA Mir, R Malik, V Joshi, RR Chaudhuri, Z Khan, ... 2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-5, 2023 | | 2023 |
| Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs RR Malik, AN Shaji, Z Khan, M Bhattacharya, MA Munshi, RR Chaudhuri, ... 2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-7, 2023 | | 2023 |
| Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic $\textit {R} _ {\bio {ON}} $ Behavior in AlGaN/GaN HEMTs—Part II RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices, 2023 | | 2023 |
| Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2O3 Based Vertical Schottky Barrier Diodes H Raj, V Joshi, RR Chaudhuri, RR Malik, M Shrivastava 2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023 | | 2023 |
RAJARSHI ROY CHAUDHURIDST INSPIRE PhD Fellow, Department of Electronic Systems Engg., Indian Institute of Science在 iisc.ac.in 的电子邮件经过验证
