| Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiNx stressors WC Cheng, M He, S Lei, L Wang, J Wu, F Zeng, Q Hu, Q Wang, F Zhao, ... Semiconductor Science and Technology 35 (4), 045010, 2020 | 13 | 2020 |
| Silicon nitride stress liner impacts on the electrical characteristics of AlGaN/GaN HEMTs WC Cheng, T Fang, S Lei, Y Zhao, M He, M Chan, G Xia, F Zhao, H Yu 2019 IEEE International Conference on Electron Devices and Solid-State …, 2019 | 13 | 2019 |
| Study on the optimization of off-state breakdown performance of p-GaN HEMTs F Zeng, Q Wang, S Lin, L Wang, G Zhou, WC Cheng, M He, Y Jiang, Q Ge, ... 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 9 | 2020 |
| Beta-Ga2O3 MOSFET Device Optimization via TCAD M He, F Zeng, WC Cheng, Q Wang, H Yu, KW Ang 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 8 | 2020 |
| Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications WC Cheng, J He, M He, Z Qiao, Y Jiang, F Du, X Wang, H Hong, Q Wang, ... Journal of Vacuum Science & Technology B 40 (2), 2022 | 7 | 2022 |
| Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications WC Cheng, F Zeng, M He, Q Wang, M Chan, H Yu IEEE Journal of the Electron Devices Society 8, 1138-1144, 2020 | 7 | 2020 |
| Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfacial Layer M He, WC Cheng, F Zeng, Z Qiao, YC Chien, Y Jiang, W Li, L Jiang, ... IEEE Transactions on Electron Devices 68 (7), 3314-3319, 2021 | 6 | 2021 |
| Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance JQ He, KY Wen, PR Wang, MH He, FZ Du, Y Jiang, CY Tang, N Tao, ... Applied Physics Letters 123 (10), 2023 | 4 | 2023 |
| Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity C Tang, C Fu, Y Jiang, M He, C Deng, K Wen, J He, P Wang, F Du, ... Applied Physics Letters 123 (9), 2023 | 4 | 2023 |
| Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation C Deng, WC Cheng, XG Chen, KY Wen, MH He, CY Tang, P Wang, ... Applied Physics Letters 122 (23), 2023 | 2 | 2023 |
| Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET M He, K Wen, C Deng, M Li, Y Cui, Q Wang, H Yu, KW Ang IEEE Transactions on Electron Devices 70 (6), 3191-3195, 2023 | 1 | 2023 |
| Quasi-normally-off AlGaN/GaN HEMTs with strained comb gate for power electronics applications WC Cheng, M He, F Zeng, Q Wang, M Chan, H Yu 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020 | 1 | 2020 |
| Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors WC Cheng, M He, S Lei, L Wang, J Wu, F Zeng, Q Hu, F Zhao, M Chan, ... arXiv preprint arXiv:1908.00125, 2019 | 1 | 2019 |
