The emergence and prospects of deep-ultraviolet light-emitting diode technologies M Kneissl, TY Seong, J Han, H Amano nature photonics 13 (4), 233-244, 2019 | 999 | 2019 |
Advances in group III-nitride-based deep UV light-emitting diode technology M Kneissl, T Kolbe, C Chua, V Kueller, N Lobo, J Stellmach, A Knauer, ... Semiconductor Science and Technology 26 (1), 014036, 2010 | 795 | 2010 |
Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection MA Würtele, T Kolbe, M Lipsz, A Külberg, M Weyers, M Kneissl, M Jekel Water research 45 (3), 1481-1489, 2011 | 521 | 2011 |
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ... Applied physics letters 75 (10), 1360-1362, 1999 | 473 | 1999 |
The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 395 | 2020 |
Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars GD Chern, HE Tureci, AD Stone, RK Chang, M Kneissl, NM Johnson Applied Physics Letters 83 (9), 1710-1712, 2003 | 340 | 2003 |
Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates TJ Cervantes, LT Romano, MA Kneissl US Patent 6,379,985, 2002 | 302 | 2002 |
Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure MA Kneissl US Patent 7,751,455, 2010 | 267 | 2010 |
III-nitride ultraviolet emitters: Technology and applications M Kneissl, J Rass Springer, 2015 | 261 | 2015 |
light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off WS Wong, T Sands, NW Cheung, M Kneissl, DP Bour, P Mei, LT Romano, ... Applied Physics Letters 77 (18), 2822-2824, 2000 | 259 | 2000 |
Metastability of oxygen donors in AlGaN MD McCluskey, NM Johnson, CG Van de Walle, DP Bour, M Kneissl, ... Physical Review Letters 80 (18), 4008, 1998 | 227 | 1998 |
III-Nitride ultraviolet emitters M Kneissl, J Rass Springer Series in Materials Science, 2016 | 220 | 2016 |
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ... Applied Physics Letters 112 (4), 2018 | 212 | 2018 |
Ultraviolet semiconductor laser diodes on bulk AlN M Kneissl, Z Yang, M Teepe, C Knollenberg, O Schmidt, P Kiesel, ... Journal of Applied Physics 101 (12), 2007 | 201 | 2007 |
Method for nitride based laser diode with growth substrate removed using an intermediate substrate MA Kneissl, DP Bour, P Mei, LT Romano US Patent 6,365,429, 2002 | 201 | 2002 |
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells JE Northrup, CL Chua, Z Yang, T Wunderer, M Kneissl, NM Johnson, ... Applied Physics Letters 100 (2), 2012 | 200 | 2012 |
Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials WS Wong, MA Kneissl US Patent 6,562,648, 2003 | 196 | 2003 |
Optical polarization characteristics of ultraviolet (In)(Al) GaN multiple quantum well light emitting diodes T Kolbe, A Knauer, C Chua, Z Yang, S Einfeldt, P Vogt, NM Johnson, ... Applied Physics Letters 97 (17), 2010 | 193 | 2010 |
Method of fabricating GAN semiconductor structures using laser-assisted epitaxial liftoff CL Chua, MA Kneissl, DP Bour US Patent 6,455,340, 2002 | 193 | 2002 |
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells T Wernicke, L Schade, C Netzel, J Rass, V Hoffmann, S Ploch, A Knauer, ... Semiconductor science and technology 27 (2), 024014, 2012 | 175 | 2012 |