| Optical-phonon behavior in Ga 1-x In x As: The role of microscopic strains and ionic plasmon coupling J Groenen, R Carles, G Landa, C Guerret-Piécourt, C Fontaine, M Gendry Physical Review B 58 (16), 10452, 1998 | 142 | 1998 |
| Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs A Mlayah, R Carles, G Landa, E Bedel, A Muñoz‐Yagüe Journal of applied physics 69 (7), 4064-4070, 1991 | 89 | 1991 |
| Optical determination of strains in heterostructures: GaAs/Si as an example G Landa, R Carles, C Fontaine, E Bedel, A Muñoz‐Yagüe Journal of applied physics 66 (1), 196-200, 1989 | 83 | 1989 |
| Optical determination of strains in heterostructures: GaAs/Si as an example G Landa, R Carles, C Fontaine, E Bedel, A Muñoz‐Yagüe Journal of Applied Physics 66 (1), 196-200, 1989 | 83 | 1989 |
| Raman investigation of the InP lattice dynamics E Bedel, G Landa, R Carles, JP Redoules, JB Renucci Journal of Physics C: Solid State Physics 19 (10), 1471, 1986 | 77 | 1986 |
| RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS E Bedel-Pereira, G Landa, R Carles, J Redoules, J Renucci | 77* | 1986 |
| Tensile and compressive strain relief in InxGa1− xAs epilayers grown on InP probed by Raman scattering J Groenen, G Landa, R Carles, PS Pizani, M Gendry Journal of applied physics 82 (2), 803-809, 1997 | 71 | 1997 |
| A computational chemist approach to gas sensors: Modeling the response of SnO2 to CO, O2, and H2O Gases JM Ducéré, A Hemeryck, A Estève, MD Rouhani, G Landa, P Ménini, ... Journal of computational chemistry 33 (3), 247-258, 2012 | 61 | 2012 |
| Nanoscale pressure effects in individual double-wall carbon nanotubes P Puech, E Flahaut, A Sapelkin, H Hubel, DJ Dunstan, G Landa, ... Physical Review B 73 (23), 233408, 2006 | 50 | 2006 |
| Spectroscopic detection of carbon nanotube interaction with amphiphilic molecules in epoxy resin composites A Bassil, P Puech, G Landa, W Bacsa, S Barrau, P Demont, C Lacabanne, ... Journal of Applied Physics 97 (3), 2005 | 44 | 2005 |
| Characterization of implantation and annealing of Zn‐implanted InP by Raman spectrometry E Bedel, G Landa, R Carles, JB Renucci, JM Roquais, PN Favennec Journal of applied physics 60 (6), 1980-1984, 1986 | 42 | 1986 |
| CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY E Bedel-Pereira, G Landa, R Carles, J Renucci, J Roquais, P Favennec | 42* | 1986 |
| Raman determination of the composition in semiconductor ternary solid solutions N Saint‐Cricq, G Landa, JB Renucci, I Hardy, A Muñoz‐Yague Journal of applied physics 61 (3), 1206-1208, 1987 | 37 | 1987 |
| Finding reaction pathways and transition states: r-ARTn and d-ARTn as an efficient and versatile alternative to string approaches A Jay, C Huet, N Salles, M Gunde, L Martin-Samos, N Richard, G Landa, ... Journal of Chemical Theory and Computation 16 (10), 6726-6734, 2020 | 35 | 2020 |
| Insights into crystalline preorganization of gas-phase precursors: densification mechanisms S Olivier, JM Ducéré, C Mastail, G Landa, A Estève, MD Rouhani Chemistry of Materials 20 (4), 1555-1560, 2008 | 32 | 2008 |
| GaSb/GaAs heteroepitaxy characterized as a stress-free system C Raisin, A Rocher, G Landa, R Carles, L Lassabatere Applied Surface Science 50 (1-4), 434-439, 1991 | 31 | 1991 |
| Dynamical properties of Ga 1− x In x As solid solutions: Influence of local distortion effects G Landa, R Carles, JB Renucci Solid state communications 86 (6), 351-355, 1993 | 30 | 1993 |
| Strain effects on optical phonons in< 111> GaAs layers analyzed by Raman scattering P Puech, G Landa, R Carles, C Fontaine Journal of applied physics 82 (9), 4493-4499, 1997 | 28 | 1997 |
| Raman study under resonant conditions of defects near the interface in a GaAs/Si heterostructure A Mlayah, R Carles, G Landa, E Bedel, C Fontaine, A Muñoz‐Yagüe Journal of applied physics 68 (9), 4777-4781, 1990 | 26 | 1990 |
| Raman characterization of twinning in heteroepitaxial semiconductor layers: GaAs/(Ca, Sr) F2 G Landa, R Carles, JB Renucci, C Fontaine, E Bedel, A Munoz‐Yague Journal of applied physics 60 (3), 1025-1031, 1986 | 26 | 1986 |
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