| Recessed channel ferroelectric-gate field-effect transistor memory with ferroelectric layer between dual metal gates B Kwak, K Lee, NH Park, SJ Jeon, H Kim, D Kwon IEEE Transactions on Electron Devices 69 (3), 1054-1057, 2022 | 10 | 2022 |
| Effects of temperature and DC cycling stress on resistive switching mechanisms in hafnia-based ferroelectric tunnel junction W Shin, RH Koo, KK Min, B Kwak, D Kwon, D Kwon, JH Lee Applied Physics Letters 122 (15), 2023 | 6 | 2023 |
| Frequency doubler based on ferroelectric tunnel field-effect transistor H Kim, B Kwak, JH Kim, D Kwon IEEE Transactions on Electron Devices 69 (7), 4046-4049, 2022 | 6 | 2022 |
| Ferroelectric-gate tunnel field-effect transistor one-transistor ternary contents addressable memory B Kwak, H Kim, D Kwon Semiconductor Science and Technology 38 (5), 055013, 2023 | 4 | 2023 |
| Demonstration of ferroelectric-gate field-effect transistors with recessed channels K Lee, B Kwak, S Kim, D Kwon IEEE Electron Device Letters, 2023 | 3 | 2023 |
| Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications B Kwak, K Lee, S Kim, D Kwon IEEE Electron Device Letters, 2024 | 1 | 2024 |
| Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors B Kwak, J Kim, K Lee, W Shin, D Kwon IEEE Electron Device Letters, 2024 | | 2024 |
| High-density 3D-NAND flash with dual-string select line (D-SSL) B Kwak, D Kwon, JG Yun Engineering Research Express 6 (3), 035335, 2024 | | 2024 |
| Signal-Processing Application Based on Ferroelectric Tunnel Field-Effect Transistor B Kwak, D Kwon, H Kim IEEE Transactions on Nanotechnology, 2024 | | 2024 |
| Analysis on Degradation of Ferroelectric Memory S Kim, J Kim, S Jeong, K Kwon, C Han, E Park, J Yim, B Kwak, J You, ... 한국차세대컴퓨팅학회 학술대회, 212-213, 2022 | | 2022 |
Hyunwoo KimKonkuk University在 konkuk.ac.kr 的电子邮件经过验证
