| Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes S De, A Layek, S Bhattacharya, D Kumar Das, A Kadir, A Bhattacharya, ... Applied Physics Letters 101 (12), 2012 | 59 | 2012 |
| Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ... Advanced Functional Materials 21 (20), 3828-3835, 2011 | 58 | 2011 |
| Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor A Kadir, T Ganguli, MR Gokhale, AP Shah, SS Chandvankar, BM Arora, ... Journal of crystal growth 298, 403-408, 2007 | 34 | 2007 |
| Determination of InN–GaN heterostructure band offsets from internal photoemission measurements ZH Mahmood, AP Shah, A Kadir, MR Gokhale, S Ghosh, A Bhattacharya, ... Applied Physics Letters 91 (15), 2007 | 29 | 2007 |
| Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system A Kadir, CC Huang, KE Kian Lee, EA Fitzgerald, SJ Chua Applied Physics Letters 105 (23), 2014 | 26 | 2014 |
| The role of hydrostatic stress in determining the bandgap of InN epilayers A Kadir, T Ganguli, R Kumar, MR Gokhale, AP Shah, S Ghosh, BM Arora, ... Applied Physics Letters 91 (11), 2007 | 26 | 2007 |
| Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide A Kadir, S Mukhopadhyay, T Ganguli, C Galande, MR Gokhale, BM Arora, ... Solid state communications 146 (9-10), 361-364, 2008 | 25 | 2008 |
| MOVPE growth of semipolar (112¯ 2) Al1− xInxN across the alloy composition range (0≤ x≤ 0.55) N Hatui, M Frentrup, AA Rahman, A Kadir, S Subramanian, M Kneissl, ... Journal of Crystal Growth 411, 106-109, 2015 | 21 | 2015 |
| Growth mode transition and relaxation of thin InGaN layers on GaN (0001) M Pristovsek, A Kadir, C Meissner, T Schwaner, M Leyer, J Stellmach, ... Journal of crystal growth 372, 65-72, 2013 | 19 | 2013 |
| Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy A Kadir, C Meissner, T Schwaner, M Pristovsek, M Kneissl Journal of crystal growth 334 (1), 40-45, 2011 | 18 | 2011 |
| Alloy disorder effects on the room temperature optical properties of Ga1− xInxNyAs1− y quantum wells B Bansal, A Kadir, A Bhattacharya, BM Arora, R Bhat Applied physics letters 89 (3), 2006 | 18 | 2006 |
| Photoluminescence from localized states in disordered indium nitride B Bansal, A Kadir, A Bhattacharya, VV Moshchalkov Applied Physics Letters 93 (2), 2008 | 16 | 2008 |
| Influence of buffer layers on the microstructure of MOVPE grown a-plane InN MR Laskar, T Ganguli, A Kadir, N Hatui, AA Rahman, AP Shah, ... Journal of crystal growth 315 (1), 233-237, 2011 | 13 | 2011 |
| Charge deep level transient spectroscopy of electron traps in MOVPE grown n‐GaN on sapphire ZH Mahmood, AP Shah, A Kadir, MR Gokhale, A Bhattacharya, BM Arora physica status solidi (b) 245 (11), 2567-2571, 2008 | 13 | 2008 |
| Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy M Pristovsek, A Kadir, C Meissner, T Schwaner, M Leyer, M Kneissl Journal of Applied Physics 110 (7), 2011 | 12 | 2011 |
| Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy N Lobo, A Kadir, MR Laskar, AP Shah, MR Gokhale, AA Rahman, ... Journal of Crystal Growth 310 (23), 4747-4750, 2008 | 12 | 2008 |
| Microstructure of InN epilayers deposited in a close-coupled showerhead reactor T Ganguli, A Kadir, M Gokhale, R Kumar, AP Shah, BM Arora, ... Journal of Crystal Growth 310 (23), 4942-4946, 2008 | 11 | 2008 |
| Surface transitions during InGaN growth on GaN (0001) in metal–organic vapor phase epitaxy M Pristovsek, A Kadir, M Kneissl Japanese Journal of Applied Physics 52 (8S), 08JB23, 2013 | 8 | 2013 |
| Optimization of a-plane (112¯ 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (11¯ 02) sapphire MR Laskar, A Kadir, AA Rahman, AP Shah, N Hatui, MR Gokhale, ... Journal of crystal growth 312 (14), 2033-2037, 2010 | 8 | 2010 |
| MOVPE growth and characterization of InN/GaN single and multi-quantum well structures A Kadir, MR Gokhale, A Bhattacharya, A Pretorius, A Rosenauer Journal of Crystal Growth 311 (1), 95-98, 2008 | 8 | 2008 |
Arnab BhattacharyaProfessor, Dept. of CMPMS, Tata Institute of Fundamental Research在 tifr.res.in 的电子邮件经过验证
