受强制性开放获取政策约束的文章 - Markus Kuhn了解详情
无法在其他位置公开访问的文章：2 篇
X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces
D Koh, SK Banerjee, J Brockman, M Kuhn, SW King
Diamond and Related Materials 101, 107647, 2020
强制性开放获取政策： US National Science Foundation
X-Ray Photoemission Investigation of the Beryllium Oxide Band Alignment with Magnesium Oxide and Estimates for Other Insulating and Conducting Oxides
D Koh, TW Hudnall, CW Bielawski, S Banerjee, J Brockman, M Kuhn, ...
ECS Transactions 102 (3), 127, 2021
强制性开放获取政策： US National Science Foundation
可在其他位置公开访问的文章：4 篇
Multivalley electron conduction at the indirect-direct crossover point in highly tensile-strained germanium
MB Clavel, F Murphy-Armando, Y Xie, KT Henry, M Kuhn, RJ Bodnar, ...
Physical Review Applied 18 (6), 064083, 2022
强制性开放获取政策： US National Science Foundation, US Department of Defense, Science Foundation …
Engineering the Interfacial Electronic Structure of Epitaxial Ge/AlAs (001) Heterointerfaces via Substitutional Boron Incorporation: The Roles of Doping and Interface Stoichiometry
MB Clavel, G Greene-Diniz, M Grüning, KT Henry, M Kuhn, RJ Bodnar, ...
ACS Applied Electronic Materials 1 (12), 2646-2654, 2019
强制性开放获取政策： US National Science Foundation
Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides
D Koh, SK Banerjee, C Locke, SE Saddow, J Brockman, M Kuhn, ...
Journal of Vacuum Science & Technology B 37 (4), 2019
强制性开放获取政策： US National Science Foundation
Analytical challenges of determining composition and structure in small volumes with applications to semiconductor technology, nanostructures and solid state science
Z Ma, M Kuhn, DC Johnson
Semiconductor Science and Technology 32 (3), 030201, 2017
强制性开放获取政策： US National Science Foundation
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