受强制性开放获取政策约束的文章 - Anthony Cullis了解详情
无法在其他位置公开访问的文章：7 篇
Energy filtered TEM analyses of Ge snowploughing during oxidation of SiGe/Si MOSFET device structures
DJ Norris, AG Cullis, G Braithwaite, TJ Grasby, TE Whall, EHC Parker
Microscopy of Semiconducting Materials 2001, 185-188, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Defect observations in GaN MQW structures
JP O’Neill, AG Cullis, PJ Parbrook, DA Wood
Microscopy of Semiconducting Materials 2001, 337-340, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Investigation of microstructural evolution during the growth of epitaxial GaN by correlated in situ optical monitoring, TEM and AFM techniques
M Lada, AG Cullis, PJ Parbrook, DA Wood, DJ Norris, G Duggan
Microscopy of Semiconducting Materials 2001, 297-302, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Nano-clustering anomalies in InGaN/GaN multiple quantum well structures
JP O'Neill, IM Ross, AG Cullis, T Wang, PJ Parbrook
Microscopy of Semiconducting Materials 2003, 297-300, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Effect of anneal duration on GaN nuclei and subsequent epilayers
M Lada, AG Cullis, PJ Parbrook, MA Whitehead
Microscopy of Semiconducting Materials 2003, 325-328, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Advanced TEM analysis of strain-balanced Si/SiGe resonant tunnelling diode structures
ACK Chang, DJ Norris, AG Cullis, DJ Paul
Microscopy of Semiconducting Materials 2003, 163-166, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
Measurements of gate-oxide interface roughness in strained-Si virtual substrate SiGe/Si MOSFET device structures
DJ Norris, AG Cullis, SH Olsen, AG O'Neill, J Zhang
Microscopy of Semiconducting Materials 2003, 389-392, 2018
强制性开放获取政策： UK Engineering and Physical Sciences Research Council
可在其他位置公开访问的文章：2 篇
Composition and strain dependence of the piezoelectric coefficients in alloys
MA Migliorato, D Powell, AG Cullis, T Hammerschmidt, GP Srivastava
Physical Review B—Condensed Matter and Materials Physics 74 (24), 245332, 2006
强制性开放获取政策： German Research Foundation
Strain analysis in sub-micron silicon devices by TEM/CBED
A Armigliato, R Balboni, S Frabboni, A Benedetti, AG Cullis, G Pavia
Microscopy of Semiconducting Materials 2001, 467-472, 2018
强制性开放获取政策： European Commission
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