| Optical phonons and structure of TlGaS2, TlGaSe2, and TlInS2 layer single crystals NM Gasanly, AF Goncharov, NN Melnik, AS Ragimov, VI Tagirov physica status solidi (b) 116 (2), 427-443, 1983 | 82 | 1983 |
| Temperature dependence of the first-order Raman scattering in GaS layered crystals NM Gasanly, A Aydınlı, H Özkan, C Kocabaş Solid state communications 116 (3), 147-151, 2000 | 71 | 2000 |
| Donor–acceptor pair recombination in gallium sulfide A Aydinli, NM Gasanly, K Gökşen Journal of Applied Physics 88 (12), 7144-7149, 2000 | 70 | 2000 |
| Infrared and Raman spectra of layer InSe single crystals N Hasanlı, VI Tagirov, EA Vinogradov Wiley, 1978 | 64 | 1978 |
| Donor-acceptor pair recombination in AgIn5S8 single crystals NM Gasanly, A Serpengüzel, A Aydinli, O Gürlü, I Yilmaz Journal of applied physics 85 (6), 3198-3201, 1999 | 62 | 1999 |
| Radiative donor-acceptor pair recombination in TlInS2 single crystals A Aydinli, NM Gasanly, I Yilmaz, A Serpengüzel Semiconductor science and technology 14 (7), 599, 1999 | 57 | 1999 |
| Raman scattering in some III‐VI layer single crystals FE Faradev, NM Gasanly, BN Mavrin, NN Melnik physica status solidi (b) 85 (1), 381-386, 1978 | 57 | 1978 |
| Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals NS Yuksek, NM Gasanly, H Ozkan Semiconductor science and technology 18 (9), 834, 2003 | 53 | 2003 |
| Gd-doped ZnO nanoparticles: synthesis, structural and thermoluminescence properties M Isik, NM Gasanly Journal of Luminescence 207, 220-225, 2019 | 51 | 2019 |
| Vibrational Spectra of TlGaTe2, TlInTe2, and TlInSe2 Layer Single Crystals NM Gasanly, AF Goncharov, BM Dzhavadov, NN Melnik, VI Tagirov, ... physica status solidi (b) 97 (1), 367-377, 1980 | 50 | 1980 |
| Structural and temperature-dependent optical properties of thermally evaporated CdS thin films M Isik, HH Gullu, S Delice, M Parlak, NM Gasanly Materials Science in Semiconductor Processing 93, 148-152, 2019 | 49 | 2019 |
| Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals AF Qasrawi, NM Gasanly Materials research bulletin 39 (9), 1351-1357, 2004 | 44 | 2004 |
| Raman study of layer TlGaS2, β‐TlInS2, and TlGaSe2 crystals NM Gasanly, BN Mavrin, KE Sterin, VI Tagirov, ZD Khalafov physica status solidi (b) 86 (1), K49-K53, 1978 | 42 | 1978 |
| Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe2 layered crystals AF Qasrawi, NM Gasanly Semiconductor science and technology 19 (3), 505, 2004 | 40 | 2004 |
| Vibrational Spectra of Spinel—Type Compound CuIn5S8 N Hasanlı, LG Gasanova, AZ Magomedov | 38 | 1992 |
| Coexistence of indirect and direct optical transitions, refractive indices, and oscillator parameters in TlGaS2, TlGaSe2, and TlInS2 layered single crystals N Hasanlı Korean Physical Society, 2010 | 37 | 2010 |
| Optoelectronic and electrical properties of TlGaS2 single crystal AF Qasrawi, NM Gasanly physica status solidi (a) 202 (13), 2501-2507, 2005 | 36 | 2005 |
| Photoelectronic and electrical properties of CuIn5S8 single crystals AF Qasrawi, NM Gasanly Crystal Research and Technology: Journal of Experimental and Industrial …, 2003 | 35 | 2003 |
| Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal NM Gasanly, A Serpengüzel, SMA Baten Journal of luminescence 86 (1), 39-43, 2000 | 35 | 2000 |
| Temperature dependence of the Raman-active phonon frequencies in indium sulfide NM Gasanly, H Özkan, A Aydinli, I Yilmaz Solid state communications 110 (4), 231-236, 1999 | 35 | 1999 |
