| Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural … R Gourishetty, D Panda, S Dongre, J Saha, SA Gazi, S Chakrabarti Journal of Luminescence 233, 117899, 2021 | 9 | 2021 |
| In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing S Dongre, S Paul, S Mondal, R Kumar, D Panda, SA Gazi, D Das, ... ACS Applied Electronic Materials 2 (5), 1243-1253, 2020 | 7 | 2020 |
| Subsiding strain-induced In-Ga intermixing in InAs/InxGa1− xAs sub-monolayer quantum dots for room temperature photodetectors SR Shriram, R Gourishetty, D Panda, D Das, S Dongre, J Saha, ... Infrared Physics & Technology 121, 104047, 2022 | 5 | 2022 |
| Evaluation of In (Ga) As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage R Gourishetty, D Panda, S Dongre, SA Gazi, S Chakrabarti Journal of Luminescence 239, 118340, 2021 | 5 | 2021 |
| Improved carrier transfer in vertically coupled surface and buried InAs Stranski-Krastanov quantum dot system via ex-situ surface state passivation MR Mantri, D Panda, D Das, S Mondal, S Paul, SA Gazi, R Kumar, ... Journal of Luminescence 226, 117470, 2020 | 4 | 2020 |
| Optimization of vertical strain coupling in InAs/GaAs pip quantum dot infrared photodetectors with applied growth strategy S Dongre, S Paul, S Mondal, D Panda, SR Shriram, MR Mantri, SA Gazi, ... Journal of Luminescence 226, 117499, 2020 | 3 | 2020 |
| Submonolayer quantum dots in PiP configuration: study on effects of monolayer coverage and stacking variations S Dongre, D Panda, SA Gazi, D Das, R Kumar, N Pandey, A Kumar, ... Quantum Dots, Nanostructures, and Quantum Materials: Growth …, 2020 | 2 | 2020 |
| Green light emission in CsPbBr3 quantum dots: theoretical and experimental insight A Kumar, N Pandey, S Dongre, S Chakrabarti Light-Emitting Devices, Materials, and Applications XXIV 11302, 222-227, 2020 | 2 | 2020 |
| Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer R Kumar, D Panda, J Saha, S Dongre, SA Gazi, S Chakrabarti Nanophotonics VIII 11345, 280-286, 2020 | 1 | 2020 |
| The effect of growth rate variation on structural and optical properties of self assembled InAs quantum dots RA Dahale, A Aanand, SA Gazi, S Dongre, S Paul, S Mondal, A Agarwal, ... Low-Dimensional Materials and Devices 2019 11085, 111-116, 2019 | 1 | 2019 |
| The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots A Agarwal, A Aanand, SA Gazi, S Dongre, S Paul, S Mondal, RA Dahale, ... Low-Dimensional Materials and Devices 2019 11085, 102-110, 2019 | 1 | 2019 |
| Absorption Coefficient, Mobility and Carrier Lifetime Calculations of PIP Quantum Dot Infrared Photodetectors S Dongre, P Kumar, S Patil, R Gharate, RP Singh 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024 | | 2024 |
| Corrigendum to" A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction"[J. Cryst … S Dongre Journal of Crystal Growth 629, 127630, 2024 | | 2024 |
| A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction S Dongre, J Saha, D Panda, D Das, S Reddy, S Paul, S Mondal, SA Gazi, ... Journal of Crystal Growth 629, 127516, 2024 | | 2024 |
| Validation of the effects of growth parameter variations on the optical characteristics of InAs QD through Nextnano simulations S Dongre, D Panda, D Das, SA Gazi, R Kumar, M Biswas, A Mandal, ... Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices …, 2021 | | 2021 |
| Structural, electronic, and optical properties of type II heterostructure based on WS2/black phosphorene A Kumar, N Pandey, S Dongre, S Chakrabarti Physics and Simulation of Optoelectronic Devices XXVIII 11274, 253-258, 2020 | | 2020 |
| Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots MR Mantri, D Panda, SA Gazi, S Dongre, S Chakrabarti Quantum Dots, Nanostructures, and Quantum Materials: Growth …, 2020 | | 2020 |
| Optical and structural behaviour of InAs quantum dots grown on the Si substrate without Si-Ge graded layer and without migration enhanced epitaxy layer R Kumar, D Panda, J Saha, S Dongre, SA Gazi, S Chakrabarti Quantum Dots, Nanostructures, and Quantum Materials: Growth …, 2020 | | 2020 |
| Optimization of strain-coupled InAs QD layers in PiP infrared photodetector heterostructures S Dongre, D Panda, SA Gazi, D Das, R Kumar, A Kumar, N Pandey, ... Quantum Dots, Nanostructures, and Quantum Materials: Growth …, 2020 | | 2020 |
| Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot heterostructures with higher (0.1 ML/sec) and lower (0.05 ML/sec) growth rates S Choudhary, J Saha, D Panda, D Das, S Dongre, S Chakrabarti Quantum Dots, Nanostructures, and Quantum Materials: Growth …, 2020 | | 2020 |
