| The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods A Jasik, A Wnuk, J Gaca, M Wójcik, A Wójcik-Jedlińska, J Muszalski, ... Journal of Crystal Growth 311 (19), 4423-4432, 2009 | 57 | 2009 |
| The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods A Jasik, A Wnuk, A Wójcik-Jedlińska, R Jakieła, J Muszalski, W Strupiński, ... Journal of crystal growth 310 (11), 2785-2792, 2008 | 35 | 2008 |
| High-power low vertical beam divergence 800-nm-band double-barrier-SCH GaAsP–(AlGa) as laser diodes A Malag, A Jasik, M Teodorczyk, A Jagoda, A Kozlowska IEEE photonics technology letters 18 (15), 1582-1584, 2006 | 34 | 2006 |
| Passivation studies of GaSb-based superlattice structures E Papis-Polakowska, J Kaniewski, J Szade, W Rzodkiewicz, A Jasik, ... Thin Solid Films 567, 77-81, 2014 | 28 | 2014 |
| Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice A Jasik, I Sankowska, D Pierścińska, K Regiński, K Pierściński, ... Journal of applied physics 110 (12), 2011 | 22 | 2011 |
| Noise-current correlations in InAs/GaSb Type-II superlattice midwavelength infrared detectors Ł Ciura, A Kolek, J Jureńczyk, K Czuba, A Jasik, I Sankowska, ... IEEE Transactions on Electron Devices 63 (12), 4907-4912, 2016 | 20 | 2016 |
| Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system A Jasik, I Sankowska, A Wawro, J Ratajczak, R Jakieła, D Pierścińska, ... Applied Physics A 124, 1-12, 2018 | 19 | 2018 |
| 1/f noise modeling of InAs/GaSb superlattice mid-wavelength infrared detectors Ł Ciura, A Kolek, J Jureńczyk, K Czuba, A Jasik, I Sankowska, ... Optical and Quantum Electronics 50, 1-11, 2018 | 15 | 2018 |
| Role of beryllium doping in strain changes in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method I Sankowska, A Jasik, J Kubacka-Traczyk, JZ Domagala, K Regiński Applied Physics A 108, 491-496, 2012 | 15 | 2012 |
| Low-temperature grown near surface semiconductor saturable absorber mirror: Design, growth conditions, characterization, and mode-locked operation A Jasik, J Muszalski, K Pierściński, M Bugajski, VG Talalaev, M Kosmala Journal of Applied Physics 106 (5), 2009 | 15 | 2009 |
| The impact of mesa etching method on IR photodetector current-voltage characteristics D Smoczyński, K Czuba, E Papis-Polakowska, P Kozłowski, J Ratajczak, ... Materials Science in Semiconductor Processing 118, 105219, 2020 | 14 | 2020 |
| On the onset of strain relaxation in the Al0. 45Ga0. 55As/InxGa1− xAs active region in quantum cascade laser structures I Sankowska, P Gutowski, A Jasik, K Czuba, J Dabrowski, M Bugajski Journal of Applied Crystallography 50 (5), 1376-1381, 2017 | 13 | 2017 |
| Dual-wavelength vertical external-cavity surface-emitting laser: strict growth control and scalable design A Jasik, AK Sokół, A Broda, I Sankowska, A Wójcik-Jedlińska, M Wasiak, ... Applied Physics B 122, 1-8, 2016 | 13 | 2016 |
| Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wells M Marchewka, EM Sheregii, I Tralle, D Ploch, G Tomaka, M Furdak, ... Physica E: Low-dimensional Systems and Nanostructures 40 (4), 894-906, 2008 | 13 | 2008 |
| Atomically smooth interfaces of type-II InAs/GaSb superlattice on metamorphic GaSb buffer grown in 2D mode on GaAs substrate using MBE A Jasik, I Sankowska, J Ratajczak, A Wawro, D Smoczyński, K Czuba, ... Current Applied Physics 19 (2), 120-127, 2019 | 12 | 2019 |
| Study of interfaces chemistry in type-II GaSb/InAs superlattice structures E Papis-Polakowska, J Kaniewski, J Szade, W Rzodkiewicz, A Jasik, ... Thin Solid Films 522, 223-227, 2012 | 12 | 2012 |
| Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes K Czuba, I Sankowska, J Jureńczyk, A Jasik, E Papis-Polakowska, ... Semiconductor Science and Technology 32 (5), 055010, 2017 | 11 | 2017 |
| Study of MOCVD growth of InGaAsSb/AlGaAsSb/GaSb heterostructures using two different aluminium precursors TMAl and DMEAAl M Wesołowski, W Strupiński, M Motyka, G Sęk, E Dumiszewska, P Caban, ... Opto-Electronics Review 19 (2), 140-144, 2011 | 11 | 2011 |
| Effects of composition grading at heterointefaces and layer thickness variations on Bragg mirror quality J Gaca, M Wojcik, A Jasik, K Pierściński, M Kosmala, A Turos, ... Opto-Electronics Review 16 (1), 12-17, 2008 | 11 | 2008 |
| Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation A Jasik, J Kubacka-Traczyk, K Regiński, I Sankowska, R Jakieła, A Wawro, ... Journal of Applied Physics 110 (7), 2011 | 10 | 2011 |
Jan MuszalskiŁukasiewicz Research Network - Institute of Microelectronics and Photonics (before在 imif.lukasiewicz.gov.pl 的电子邮件经过验证
